Sanyo Electric Co., Ltd.

Tottori Sanyo Electric Co., Ltd.

Katsumi Yagi

Takashi Kano

Tatsuya Kunisato

Yasuhiko Matsushita

Yasuhiro Ueda

Keishi Kohno

A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.

Manufacturing method of light emitting device

A compound semiconductor light emitting device for preparing a chip which improves the light extraction efficiency, enables mounting of easy positioning with only once wire bonding, and leads to a reduction in the manhour. One face of an insulative substrate () is overlaid with a semiconductor layer () consisting of a plurality of semiconductor thin films to form an active layer (). One electrode () is formed on the top face of this semiconductor layer (), and the other electrode () on the other face of the insulative substrate (). For the exposure of a first semiconductor thin film layer () connected to the other electrode (), the semiconductor film over the first semiconductor thin film layer () is removed to form an exposure region (). This exposure region () is provided with a through hole () penetrating through the insulative substrate () and first semiconductor thin film layer (). The first semiconductor thin film layer () and the other electrode () are electrically connected with a conductive material () formed on the through hole ().

Compound semiconductor light emitting device and its manufacturing method

A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first conductivity type and composed of a III-V group nitride system semiconductor containing In, an undoped cap layer formed on the active layer and composed of a III-V group nitride system semiconductor, and a cladding layer formed on the cap layer and composed of a III-V group nitride system semiconductor of a second conductivity type.

Light emitting device with cap layer

A semiconductor laser includes an active layer (13) for oscillating a laser beam, a first clad layer (12) and a second clad layer (14) stacked to hold the active layer (13), a QW layer (15) stacked on the second clad layer (14) and a diffusion portion (17) formed in the central portion of the QW layer (15) by impurity diffusion. Thickness of the second clad layer (14) is so selected that a beam generated from the active layer (13) can penetrate into the second clad layer (14). The QW layer (15) absorbs the beam generated from the active layer (13), while the diffusion layer (17) in the central portion thereof functions as a non-absorption region with respect to the beam. Thus, implemented is a horizontal optical confinement substantially equivalent to CSP structure.

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Suita, Japan

Katsumi Yagi