Fuji Electric Co., Ltd.

Kyushu University

Katsumi Taniguchi

Tomonori Katano

Narumi Sato

Akiyasu Kumagai

Yoshinari Ikeda

Hiromi Ono

Hiromichi Gohara

Ryoichi Kato

Kohei Yamauchi

Shinji Uchida

Motohito Hori

Naoyuki Kanai

Yuma Murata

Tatsuhiko Asai

Tetsuya Inaba

Akito Nakagome

Masashi Hoya

Daisuke Kimijima

Yuji Hayase

Kungen Teii

A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.

Semiconductor device having an insulating sheet and a conductive film, and method of manufacturing the same

A semiconductor device encompasses a cooler made of ceramics, having a first main face and a second main face, being parallel and opposite to the first main face, defined by two opposite side faces perpendicular to the first and second main faces, a plurality of conductive-pattern layers delineated on the first main face, a semiconductor chip mounted on the first main face via one of the plurality of conductive-pattern layers, and a seal member configured to seal the semiconductor chip.

Semiconductor device

A semiconductor module includes: a first circuit substrate having a conductive layer disposed on an insulating plate; a plurality of semiconductor elements on the conductive layer, a second circuit substrate disposed above the semiconductor elements, the second circuit substrate having a main current wiring layer and a control wiring layer positioned in a layer above the main current wiring layer; a first lead terminal vertically extending upwards from and in contact with the main current wiring layer; a second lead terminal vertically extending upwards from and in contact with the conductive layer of the first circuit substrate; a third lead terminal vertically extending upwards from and in contact with the control wiring layer; and a sealing material covering at least some of the elements mentioned above.

Semiconductor module

A semiconductor unit includes: a plurality of transistor chips arranged in a plurality of parallel rows, each transistor chip respectively having a first main electrode on one surface and a second main electrode on another surface; a first conductor layer electrically connected to the first main electrodes of the transistor chips, both corner portions on one end of the first conductor layer being drawn out in a direction in which the rows of transistor chips run; a second conductor layer arranged between the both corner portions of the first conductor layer; and a wiring substrate that is arranged on a side of the second main electrodes of the plurality of transistor chips and includes a wiring layer electrically connected to the second main electrodes of the plurality of transistor chips and to the second conductor layer.

Semiconductor unit, semiconductor module, and semiconductor device having terminal region extending in parallel to the transistors

A semiconductor device includes: a first cooling device including a plurality of first flow channels through which a fluid flows, between a first main surface and a second main surface opposed to each other; a second cooling device including a plurality of second flow channels through which a fluid flows, between a third main surface and a fourth main surface parallel to the first main surface; a semiconductor element interposed between the first main surface and the third main surface facing each other; and a control terminal penetrating from the third main surface to the fourth main surface in a terminal-penetrating region defined at a predetermined position between the plurality of second flow channels, and electrically connected to a control electrode of the semiconductor element.

Semiconductor device, cooling module, power converting device, and electric vehicle

A semiconductor device has a configuration in which a stacked assembly and a resin case are combined. The stacked assembly includes a semiconductor element, a stacked substrate on which the semiconductor element is mounted, and a metal substrate on which the stacked substrate is mounted. In the resin case, a notch groove is provided at a corner portion for reducing a stress. At least one of a width and a length of the notch groove is 2 mm or more.

Semiconductor device having a resin case with a notch groove

The present invention includes: a plurality of semiconductor modules on a metal base (conductor base); a first insulating bus bar and a second insulating bus bar connecting the semiconductor modules; a box-like insulating resin frame around the semiconductor modules; a first insulating layer that seals the semiconductor modules, the first insulating layer having an upper surface at a position that is lower than upper ends of terminals extending from an insulating circuit substrate of the semiconductor module inside the insulating resin frame; and second insulating layers on the first insulating layer inside the insulating resin frame, the upper ends of the terminals being buried inside the second insulating layers. Interfaces formed by the first insulating layer, second insulating layers, and sidewall parts (third insulating layer) of the insulating resin frame are arranged between the terminals and ground positions formed at the lower ends of the sidewall parts.

Semiconductor device and method of manufacturing semiconductor device

The semiconductor device includes a first conductive layer, semiconductor elements bonded to the upper surface of the first conductive layer, a second conductive layer separated from the first conductive layer, a control terminal bonded to the second conductive layer, a control resistor bonded to the upper surface of the second conductive layer, a control-resistor pin bonded to the upper surface of the control resistor and a wiring board having a control-wiring layer for electrically connecting the semiconductor elements and the control-resistor pin.

Power semiconductor device

To realize an insulating busbar that has both low inductance and high withstand voltage, provided is an insulating busbar that connects to a module on which is mounted a semiconductor chip, including a plurality of circuit conductors; a plurality of connection terminals that respectively electrically connect the circuit conductors to the module; and an insulating resin portion that is formed integrally between each of the circuit conductors and at least a portion of a region around each connection terminal and does not have any gaps between the circuit semiconductors.

Insulating busbar and manufacturing method

A semiconductor device including semiconductor unitsA toC that each include semiconductor elementsand, a unit casesealing the semiconductor elements, and a first unit terminalexposed inside a first recessed portionprovided in a top surface of the unit case; a first unit connection portionincluding, in correspondence with each of the semiconductor units, a first connection terminalS connected to the first unit terminal, a first connection conductorSconnected between a plurality of the first connection terminals, and a first connection conductor sealing portionsealing the first connection conductor while exposing the first connection terminals; and first recessed sealing portionsthat each, in correspondence with each of the semiconductor units, seal each connection portion between the first unit terminal and the first connection terminal inside a recess of the first recessed portion.

Semiconductor device and a manufacturing method of the semiconductor device

A manufacturing method for a magnetic recording medium which includes a magnetic layer, a lower protective layer, an upper protective layer and a lubricating layer on a substrate, and in which the total film thickness of the lower protective layer and the upper protective layer is 2.5 nm or less, includes: 1) depositing the lower protective layer; 2) performing oxygen plasma treatment on the lower protective layer; 3) depositing the upper protective layer; and 4) performing nitrogen plasma treatment on the upper protective layer. It is preferable that the lower protective layer and the upper protective layer are formed of a carbon-based material, and it is further more preferable that the lower protective layer and the upper protective layer are formed of diamond-like carbon. Moreover, it is preferable that the contact angle of the lower protective layer with respect to water in the atmosphere is 25&#xb0; or less.

Manufacturing method for magnetic recording medium

In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips.

The magnetic recording medium for a heat-assisted recording system has a magnetic recording layer on a non-magnetic substrate and a protective layer on top of the magnetic recording layer. The protective layer includes a first lower protective layer on top of the magnetic recording layer, a first upper protective layer on the first lower protective layer, and a second protective layer on the first upper protective layer. The first lower protective layer is composed mainly of an element selected from the group consisting of Si, Al and Cu, and the first upper protective layer is a layer configured by an oxide of the material of the first lower protective layer.

Magnetic recording medium for heat-assisted recording system and method for manufacturing same

A magnetic recording medium includes a substrate having sequentially formed thereon (a) a magnetic layer; (b) a protective layer having a thickness ranging from 1.0 nm to 2.5 nm and being composed of an amorphous metal layer having a thickness of at least 0.3 nm, the amorphous metal layer being composed of a metal selected from the group consisting of Si, Al, Ge, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W that is in an amorphous state; (c) a carbon layer formed on the amorphous metal layer and having a thickness of at least 0.3 nm, the carbon layer including amorphous carbon; and (d) a lubricating layer, wherein the carbon layer includes nitrogen atoms in a surface thereof in which a ratio of number of nitrogen atoms to total number of carbon atoms, nitrogen atoms, and oxygen atoms is 14 atomic % or less.

Magnetic recording medium

A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.

Growing community of inventors

Matsumoto, Japan

Katsumi Taniguchi