Hitachi, Ltd.

Katsumi Tamura

Kenichi Onisawa

Moriaki Fuyama

Akira Sato

Takahiro Nakayama

Yoshio Abe

Kenichi Hashimoto

Kazuo Taguchi

Takuya Takahashi

Toshiki Kaneko

Masanobu Hanazono

Masahiro Ishii

Tetsuya Kawamura

Tsutomu Kasai

Yutaka Ito

Takahiro Ochiai

Genshiro Kawachi

Hideaki Yamamoto

Takeshi Sato

Masatoshi Wakagi

Etsuko Nishimura

Makoto Morijiri

Takayuki Nakakawaji

Masaru Takabatake

Isao Nunokawa

Hiroaki Hachino

Kunihiro Tamahashi

Shigeki Komatsuzaki

Isao Ikuta

Mitsuyoshi Shoji

Motoo Akagi

Masatomo Terakado

Osamu Asai

Mamoru Sawahata

Fuminori Ishikawa

Masaaki Imamura

Yoshimasa A Ono

Kenichi Chahara

Yuichi Harano

Isao Funyu

Ken-ichi Onisawa

Kenichi Cyahara

Shigetoshi Hirastuka

Yoichi Sakaki

A liquid crystal display device has image signal lines of a bottom gate type TFT, in which the image signal lines comprise a laminated film formed of a first conductive film disposed as a lower layer and a second conductive film disposed as an upper layer. The first conductive film is made of an alloy comprising Mo as a main ingredient and W, and the second conductive film is made of an alloy comprising Mo as a main ingredient and Zr. The device is capable of satisfying requirements of reduced resistance, improved dry etching resistance, selective wet etching with respect to the gate insulative film, the number of laminated layer of two or less, and tapered fabrication for the cross section.

Liquid crystal display device

A liquid crystal display unit having one pair of substrates, a liquid crystal layer held between the pair of substrates, a plurality of scanning lines formed on one of the pair of substrates, a plurality of data lines which cross the scanning lines in matrix form, thin film transistors formed near the crossing points of the scanning lines and data lines, and pixel electrodes connected to the thin film transistors. A source electrode and a drain electrode of each thin film transistor, and each data line, are made of a molybdenum alloy having a chromium content in a range of 1.5 weight % to 5 weight %.

Liquid crystal display units with data line being formed of molybdenum alloy having chromium content

Liquid crystal display device and wiring structure therefor

A liquid crystal display unit is used that has data lines made of a molybdenum-alloyed film having a chromium content from 2 wt. % or more, but up to 5 wt. %, or a molybdenum-alloyed film lamination (Mo&mdash;Cr) consisting of a first electroconductive film and a second electroconductive film, with the first electroconductive film having a chromium content from 2 wt. % or more, but up to 5 wt. % and the second electroconductive film being provided above the first electroconductive film and containing less chromium than the first electroconductive film does. The use of the data lines composed of these materials enables the following requirements to be satisfied: high dry-etching resistance, low resistance, low ACF contact resistance, low side etching rates, forward tapered wiring cross-sectional shape, and up to two lamination layers.

Liquid crystal display units

A wiring of a liquid crystal display device is made of a lamination film including a first layer of Nb or alloy containing Nb as its main component and a second layer of nitride of Nb or alloy containing Nb as its main component. A liquid crystal display device having such a wiring provides a wiring structure excellent in resistance to thermal oxidation.

Liquid crystal display device having wiring layer made of nitride of Nb or nitride alloy containing Nb as a main component

The method of fabrication of a liquid crystal display device includes the steps of: forming a metal thin film on a glass substrate; forming a resist pattern on the metal thin film by photolithography; and wet-etching the metal thin film with an etchant formed of a mixture including phosphoric acid, nitric acid in a range between 7 mol % and 12 mol % inclusive, and at least one of ammonium fluoride and hydrogen fluoride in a trace amount of about 0.01 to 0.1 mol %.

Liquid crystal display device and method of manufacturing the same

An electrophotographic photoreceptor comprising a photoconductive layer comprising a photoconductor, a support for the photoconductive layer and a surface layer formed on the photoconductive layer and comprising a curable resin film and an inorganic insulator pieces having a size larger than the film thickness of the curable resin film. In order to prevent the image blurring of an a-Si:H photoreceptor, on the outermost surface of the photoreceptor was formed a surface layer having a structure in which inorganic insulator pieces have protruded from the curable resin film. Since the curable resin is of high resistance and shows no quality change by corona irradiation, and besides the protruding inorganic insulator pieces prevent the abrasion of the resin, the surface layer having a long life and excellent humidity resistance, durability for corona irradiation and abrasion resistance can be realized. Further, by covering the surface layer with a fluorine-containing lubricant, the surface layer having a low friction coefficient and excellent cleaning characteristics is obtained, and besides the resin constituting the surface layer absorbs little moisture. As a result, it becomes possible to use the a-Si:H photoreceptors without a heater. Also, the surface layer of the present invention can be removed and then re-formed.

Electrophotographic photoreceptor with protruding inorganic insulator

An electroluminescent device including dielectric films each of which consists of first regions made of a material with a strong self-healing type dielectric breakdown characteristic, second regions made of a material with a strong propagating type dielectric breakdown characteristic, and mixed regions consisting of a mixture of these two materials, the first and second regions being arranged alternately in the film thickness direction with the mixed regions therebetween, the mixing ratio of these two materials in the mixed regions changing in such a manner that the ratio of one material gradually decreases from a region of this material toward the adjacent region of the other material, that is, the ratio of the other material increases. Thus, the changes in the mixing ratio of these two materials of the dielectric films in the film thickness direction are continuous and periodic. These dielectric films, with a high breakdown field strength, make it possible to obtain an electroluminescent device having a large drive voltage margin and providing a luminescence of high brightness.

Electroluminescent device

A thin film electroluminescent (EL) device includes a pair of opposing electrodes formed on a substrate of a transparent electrical insulator, and an EL layer formed between the electrodes and covered at both surfaces with insulating layers respectively. Strontium sulfide is used as a host material of the EL layer, and its crystals tend strongly to have a (200) orientation, so that the resistance to free transit of electrons participating in emission of luminescence is substantially eliminated to ensure a higher brightness.

Thin film electroluminescent device

A thin film electroluminescent (EL) device comprises a pair of opposing electrodes formed on a substrate of a transparent electrical insulator, and an EL layer formed between the electrodes and covered at both surfaces with insulating layers respectively. Strontium sulfide is used as a host material of the EL layer, and its crystals tend strongly to have a (200) orientation, so that the resistance to free transit of electrons participating in emission of luminescence is substantially eliminated to ensure a higher brightness.

In an electroluminescence element including light emitting layers emitting light by applying AC voltages thereto the light emitting layer consists of a light emitting layer emitting red light and a light emitting layer emitting bluish green light and a blue filter transmitting blue light and a green filter transmitting green light are disposed on the light emitting surface side of the bluish green light emitting layer. In this way it is possible to take out red, blue and green lights at an approximately equal brightness level and to realize full color.

Electroluminescence device

An electroluminescent device comprising an electroluminescent layer capable of emitting light under application of AC voltage, the electroluminescent layer comprising strontium sulfide as a matrix and containing at least one of halides and sulfides of cerium, europium, thulium, terbium and samarium, and having a lattice constant of not more than 6.04 .ANG. and a half-width value at the (111) face of not more than 0.21 degree has a higher brightness than an electroluminescent device having an electroluminescent layer comprising ZnS as a matrix.

Electroluminescent device and process for producing the same

A thin film EL element which comprises an insulating substrate, a transparent electrode, a first insulating layer, a light-emitting layer, a second insulating layer and a back side electrode, successively laid one upon another, at least one of the first and second insulating layers being composed of a material having a perovskite crystal structure, for example, a layer of SrTiO.sub.3, PbTiO.sub.3 or BaTiO.sub.3, particularly a SrTiO.sub.3. The material having the perovskite crystal structure has an increased (111) plane orientation such that the diffraction intensity ratio of (111) plane to (110) plane, I (111)/I (110), is more than 0.5. The material can be a single crystal, having (111) plane orientation. The material is deposited by sputtering, at substrate temperatures of not less than 200.degree. C. and up to the softening point of the insulating substrate, and at a pressure of not more than 1.times.10.sup.-2 Torr. The material has a high dielectric constant, a high dielectric strength and thus has a high reliability of element performance with a low driving voltage.

Thin film EL element and process for producing the same

A thermal head which comprises an electrically insulating substrate, a glaze layer laid thereon, a heating resistor layer laid on the glaze layer, a plurality of first layer conductors laid on the heating resistor layer and provided at predetermined distances, a protective film laid on the heating resistor layer, and a plurality of second layer conductors counterposed to the first layer conductors and laid on the first layer conductors through an interlayer insulating film, where the interlayer insulating layer is in a two layer structure of an inorganic insulating material layer having a compressive stress and an organic insulating material layer, and the organic insulating material layer is positioned on the second layer conductor side. The thermal head as structured above is free from a problem of crack formation on the interlayer insulating layer, causing a short circuit and free from a problem of discontinuation of the second layer conductors.

Thermal head

A display panel includes a pair of substrates arranged face to face with each other with a predetermined gap therebetween, at least a pair of electrodes each provided on a corresponding one of facing surfaces of the substrates, and a display substance provided between the electrodes. A picture element is made up of a pair of facing portions of the electrodes and a portion of the display substance situated between the facing portions. At least one of the electrodes is made up of a multiplicity of picture element electrodes formed of a transparent conductive film and juxtaposed to each other and a contact metal member for substantially making an electrical connection of a plurality of ones of the picture element electrodes. The contact metal member is made up of a first layer made of chromium or a chromium alloy and a second layer formed on the first layer and made of nickel or gold.

Display panel

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Hitachi, Japan

Katsumi Tamura