Kabushiki Kaisha Toshiba

Nec Corporation

Sharp Kabushiki Kaisha Corporation

Ajinomoto Co., Ltd.

Other

Kawasaki Jukogyo Kabushiki Kaisha

Tokyo Shibaura Denki Kabushiki Kaisha

Fujitsu Corporation

Sumitomo Electric Industries, Limited

Tdk Corporation

Seiko Instruments Inc

Mitsubishi Materials Corporation

Nippon Electric Co., Ltd.

Sharp Corporation

Asahi Kasei Kabushiki Kaisha

Katsumi Suzuki

Youichi Enomoto

Shoji Tanaka

Yuji Nakamura

Tsuneshi Yokota

Naomasa Nakamura

Tomohisa Yoshimaru

Naoki Morishita

Tadashi Kobayashi

Toru Nakamura

Nobuo Kato

Nobuhisa Yoshida

Akira Kikitsu

Toshihiko Nagase

Masatoshi Okamura

Masaru Ikebe

Yutaka Maruyama

Katsutaro Ichihara

Yoshifumi Araki

Keiichiro Yusu

Sumio Ashida

Shuji Yoshizawa

Yasuhiro Kusanose

Yoshitomo Nakagawa

Daisuke Shimizu

Naoki Yutani

Yoshiaki Ohda

Toshiyuki Uchii

Woo Sung Yang

Tadataka Morishita

Satoshi Marushima

Eiji Kobori

Takahiro Ishibashi

Tsuyoshi Ueno

Masaru Okutsu

Manabu Fujimoto

Yoshihiro Ishimaru

Mika Horiuchi

Masataka Hirose

Kahei Takase

Masabumi Yasunami

Takashi Meguro

Keiichi Yamaguchi

Osamu Hiwatashi

Tsuyoshi Takenaka

Takashi Koshiyouji

Sadahiko Miura

Takayuki Inoue

Yuuji Mizuno

Shigekatsu Tsuchiya

Jian-Guo Wen

Toshiro Ono

Masakatsu Hasuda

Yasuo Iida

Shuichi Fujino

Mamoru Okabe

Masahito Ban

Kouki Nakashima

Koji Muranaka

Shinichi Inazuka

Motoharu Shiiki

Toshiaki Miyanishi

Mitsuto Aso

Hideaki Zama

Christian Neumann

Tsutomu Mitsuzuka

Arthur T Murphy

Yuji Mizuno

Toshiki Kadota

Disclosed is a mask defect repair apparatus that is capable of performing defect repair with high accuracy without exposure of a mask to air while being moved between the mask defect repair apparatus and an inspection device. The mask defect repair apparatus emits charged particle beams with an amount of irradiation therewith which is corrected by a correction unit while supplying gas to a defect of the mask, thereby forming a deposition film.

Mask defect repair apparatus and mask defect repair method

Provided is a socket for inspection that can correct inclination of a terminal in contact with a device under inspection to stabilize the terminal-to-electrode contact. The socket includes: a contact terminal having a barrel with a flange, a device side terminal, a test board side terminal, and a spring; a housing having a stepped hole through which the contact terminal is inserted and in which a step that abuts against the flange is axially formed; and a movable pedestal provided so as to move closer to and away from the housing and having a receiving hole through which a distal end side of the device side terminal projecting from the barrel is inserted and which receives an electrode of the device. A guide part whose inner diameter is substantially the same as the outer diameter of a projecting portion of the device side terminal is formed in the receiving hole.

Socket for inspection

Contact probe

A gas recycling system which has a carbon dioxide collecting device for collecting gas containing carbon dioxide from a carbon dioxide source. In the system, at least part of the gas containing sulfur hexafluoride used as an electric insulation medium in a gas-insulated electric device is replaced with the carbon dioxide obtained by the carbon dioxide collecting device.

System and method for gas recycling incorporating gas-insulated electric device

Cover for a semiconductor carrier

Base for a semiconductor carrier

Semiconductor carrier

In a phase change optical recording medium, by determining heat conductivity relatively higher in one of interference layers on and under the recording layer, heat absorbed into the recording layer can be released moderately through an interference layer. Thereby, cross erasure caused by heating of adjacent tracks can be prevented, and at the same time, excessive heat radiation is prevented from a part of the recording layer nearer to the substrate to thereby maintain appropriate heat in the recording layer. As a result, cross-erasure is prevented, and data can be rewritten with the supply of typical recording/erasure power.

Optical recording medium

A method for fabricating an oxide superconducting device includes the steps of: forming a V-shaped groove on a substrate by a converging ion beam and forming a barrier with reduced superconductivity on the oxide superconducting thin-film on the groove to form a Josephson Junction, wherein the irradiation ion amount of the converging ion beam is varied according to the position of the beam within the groove in such a manner that an inclination angle of the inclined portion of the substrate is fixed. An oxide superconducting device (a Josephson Junction device) having a high degree of flexibility in arrangement and with high reproducibility, and having a high degree of uniformity is provided.

Method for fabricating oxide superconducting device

An optical recording medium of the present invention includes a light-transmitting substrate having spiral or concentric grooves formed in at least one major surface, a phase change recording film which is formed on the grooved surface of the substrate and reversibly changes phase upon irradiation of a light beam and thereby changes optical characteristics, and a reflecting layer formed on the phase change recording film, characterized in that the spiral or concentric grooves form, on at least one major surface of the substrate, lands and grooves as a rewrite region in which data is rewritten, the distance between the outer perimeter of the rewrite region and the center of the spiral or circle of the grooves is 58.5 mm or less, and the distance between the centers of a land and a groove adjacent to each other is 0.61 .mu.m to 0.62 .mu.m.

In a high frequency transmission line having a dielectric substrate and a conductor line which is provided on the dielectric substrate for allowing electric current to flow therethrough, the conductor line has a non-grain-boundary oxide superconductor layer with twin walls but without grain boundaries. The high frequency transmission line is in the form of a plane circuit. It is preferable that an oriented oxide superconductor layer is provided between the dielectric substrate and the non-grain-boundary oxide superconductor layer.

High frequency transmission line capable of improving an intermodulation

A disc cartridge of the open cover type capable of readily accomplishing takeout and insertion of a disc medium with respect to the cartridge while ensuring easiness of assembling thereof and increased reliability in operation thereof. An upper casing member is formed on a side surface thereof opposite from a shutter with a takeout opening which permits a disc medium to be taken out of a casing therethrough. The casing is mounted thereon with a cover for opening and closing the takeout opening. The cover is provided with support shafts disposed on opposite sides thereof. The upper casing member is provided with guide grooves in which the respective support shafts are slidably and pivotally fitted, to thereby permit the cover to be selectively opened. The cover may be provided with a receiving section for slidably receiving an erasure prevention member therein. The disc cartridge may be provided with a discrimination member for detecting whether takeout of the disc medium has been carried out.

Disc cartridge with particular cover configuration

A Josephson junction element having a substrate of a single crystal having a V-shaped notch formed in a surface of the substrate and a wiring pattern of an oxide superconductor formed on the surface of the substrate and crossing the notch to form a weak link region in the pattern at a position above the notch. The notch is defined by first and second walls joining with each other at the bottom of the notch and has first and second corners at which the first and second walls meet the surface of the substrate. The first and second corners have radii of curvature of 5-50 nm and 50-500 nm, respectively, provided that the difference in radius of curvature between the first and second corners is not smaller than 10 nm. The notch is formed by obliquely irradiating a predetermined portion of the substrate with a focused ion beam.

Josephson junction element with an asymmetric groove providing a single

In a superconductor mixer, a non-linear element is provided on a substrate. The non-linear element comprises at least one Josephson junction connected in series. An antenna pattern of superconductor, an intermediate frequency output pattern of superconductor, and a bias current pattern of superconductor are connected to the non-linear element. A signal high frequency wave (RF) and a local reference frequency wave (LO) are received by the antenna pattern and then absorbed in the non-linear element to obtain an intermediate frequency (IF) signal. Then, with applying a current to the series connected Josephson junction in the non-linear element from the bias current pattern, the intermediate frequency (IF) signal as a frequency signal of a difference between the signal high frequency wave (RF) and the local reference frequency wave (LO) is output to the intermediate frequency output pattern. At this time, by varying the current supplied from the bias current pattern, a phase of the output intermediate frequency (IF) signal is varied.

Superconductor mixer and phase control method therefor

A superconductive device manufacturing method is disclosed, which can prevent the characteristic deterioration on the processed surface, reduce the number of process steps, and thereby shorten the manufacturing time. The superconductive device manufacturing method comprises the steps of: forming a YBCO film (301) on a substrate (201); forming a mask pattern (302) on the formed YBCO film (301); and etching the YBCO film (301) by use of the formed mask pattern (302) and a plasma including at least oxygen plasma.

Superconductive device manufacturing method

Growing community of inventors

Tokyo, Japan

Katsumi Suzuki