Renesas Electronics Corporation

Nec Corporation

Nec Electronics Corporation

Katsumi Suemitsu

Eiji Kariyada

Tetsuhiro Suzuki

Hironobu Tanigawa

Takuya Kitamura

Kaoru Mori

Kiyokazu Nagahara

Norikazu Ohshima

Katsumichi Tagami

Yoshiyuki Fukumoto

Takeshi Okazawa

Shinzo Tsuboi

Yasuaki Ozaki

The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MWon the side of a magnetization fixed layer MFX. A magnetic wall MWis moved to the magnetic wall MWside by causing current to flow from the formed side of the magnetic wall MW. Thus, an electrical resistance Rbetween a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.

Semiconductor device

The present invention makes it possible to inhibit an MR ratio from decreasing by high-temperature heat treatment in a magnetoresistive effect element using a perpendicular magnetization film. The magnetoresistive effect element includes a data storage layer, a data reference layer, and an MgO film interposed between the data storage layer and the data reference layer. The data storage layer includes a CoFeB film coming into contact with the MgO film, a perpendicular magnetization film, and a Ta film interposed between the CoFeB film and the perpendicular magnetization film. The CoFeB film is magnetically coupled to the perpendicular magnetization film through the Ta film.

Magnetoresistive effect element and magnetic memory

A method of manufacturing a magnetic memory cell, includes forming a tunnel barrier layer over a first magnetic layer, forming a second magnetic layer over the tunnel barrier layer, forming a mask over the second magnetic layer, etching an unmasked part of the second magnetic layer to an intermediate position of the second magnetic layer in a thickness direction of the second magnetic layer, and forming a metallic oxide layer by oxidizing an unetched part of the unmasked part of the second magnetic layer.

Magnetic memory cell and method of manufacturing the same

The present invention suppresses short circuits of a magnetic memory cell and a deterioration of the characteristics of a magnetic layer. A magnetic memory cell includes: a data storage layer; a tunnel barrier layer formed on the data storage layer; a reference layer formed on the tunnel barrier layer so as to cover a part of the tunnel barrier layer; and a metallic oxide layer formed on the tunnel barrier layer without covering the reference layer. The metallic oxide layer contains an oxide of a material of a contact part of the reference layer with the tunnel barrier layer.

A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

A magnetic body device has a stacked structure comprising an underlying layer, a magnetic body layer, and a cap layer. The material for the underlying layer is different from that for the cap layer. The magnetic body layer has a free magnetization region having perpendicular magnetic anisotropy and a first characteristic change region and a second characteristic change region situated on both sides of the free magnetization region in a first in-plane direction. The perpendicular magnetic anisotropy of the first characteristic change region and the second characteristic change region is at a level lower than that of the free magnetization region. An external magnetic field containing a component in the first in-plane direction is applied to the free magnetization region. Further, a current in the first in-plane direction is supplied to the free magnetization region.

Magnetic body device and manufacturing method thereof

A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to &#x2212;z direction by the second magnetization fixed layer.

Magnetic memory

The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.

Magnetic memory and manufacturing method for the same

A magnetic memory according to the present invention comprises: a single magnetic memory cell having at least first to third magnetic layers, a first tunnel insulating layer between the first and second magnetic layers and a second tunnel insulating layer between the second and third magnetic layers. The resistance between the first and third magnetic layers when magnetization of the first and second magnetic layers are in opposite directions is different from the resistance between the second and third magnetic layers when magnetization of the second and third magnetic layers are in opposite directions. Multiple data are therefore stored into the memory cell.

Magnetic memory and method of operation thereof

A magnetic disk drive for recording and reproducing data out of a magnetic disk with a magnetoresisive (MR) head contacting the disk is disclosed. When the MR device is spaced from the surface of the medium by a recess of less than 15 nm inclusive, the surface of the medium is provided with a sheet resistance of less than 5 &OHgr;/cm,inclusive. When the sheet resistance is greater than 5 &OHgr;/cm,, the recess is selected to be 16 nm or above. To enhance a frequency characteristic, the surface of the disk is provided with an undulation period of greater than 2 &mgr;m inclusive in the direction of movement of a head and a surface roughness of less than 1 nm inclusive. With this configuration, the disk drive obviates electrical faults ascribable to the sliding contact of the head and disk.

Growing community of inventors

Kanagawa, Japan

Katsumi Suemitsu