Hitachi-high-technologies Corporation

Katsumi Setoguchi

Hideyuki Yamamoto

Tetsuo Ono

Osamu Komuro

Maki Tanaka

Hidetoshi Morokuma

Atsushi Miyamoto

Hiroki Kawada

Takashi Doi

Naoshi Itabashi

Fumihiro Sasajima

Noriaki Arai

Osamu Inoue

Miyako Matsui

Takahiro Kawasaki

Takashi Takahama

An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.

Image processing device, charged particle beam device, charged particle beam device adjustment sample, and manufacturing method thereof

In an image forming apparatus and a computer program, extraction of information about distortion in a charged particle beam scan area can be implemented. An image forming apparatus integrates image data obtained by a charged particle beam apparatus and calculates, from a plurality of images with different scan directions of the charged particle beam apparatus, first information about the amount of change in a feature quantity in accordance with the time of irradiation of the charged particle beam, second information about the amount of change in the feature quantity before and after a change in beam scan direction, and/or third information about a position error of a pattern on the image before and after the change in beam scan direction.

Image forming device and computer program

A plasma processing method for processing a sample by applying a high-frequency bias power periodically for each one period (T) which is divided along a time axis into a first sub-period (T) for which feedback control of a CD gain is executed, a second sub-period (T) for which feedback control of a select ratio is executed, and a third sub-period (T) for which feedback control of both the CD gain and the select ratio are executed. The applied power is set at a large value in the first sub-period, and a duty ratio T/T is controlled in accordance with the CD gain. A plurality of samples are processed with preset process conditions, and feedback control for each processing unit of the samples is executed in accordance with a processing state of each of the samples so that an average applied power over the one period (T) is constant.

Plasma processing method and plasma processing apparatus

A charged particle beam adjustment apparatus for tilting an electron beam by a tilt deflector is disclosed. The tilt angle adjustment of the electron beam and the distortion adjustment for correcting the image distortion generated when the electron beam is tilted are conducted on a specified. sample such as a pyramidal sample. The images before and after the tilting are acquired and processed to determine the tilt angle value and the distortion amount. The tilt angle adjustment and the adjustment for correction of the distortion are automated in accordance with a predetermined processing flow.

Charged particle beam adjustment method and apparatus

A plasma processing method of processing a substrate by controlling the application of a bias to the substrate independently of generation of plasma. The method includes modulating periodically an output value of a high-frequency voltage applied to a substrate base and changing a duty ratio of the periodic modulation for one of each processed substrate and for each of a plurality of processed substrates. The duty ratio is defined as a ratio of a sub-period of a period of the period modulation, during which a large voltage of the output value of the high-frequency voltage is applied, to the period of the periodic modulation.

Plasma is generated in a vacuum processing apparatus and a high-frequency voltage is applied to a lower electrode on which a wafer is placed. The high-frequency voltage applied to the lower electrode is subjected to periodical on-off modulation, the on-off duty ratio of which is determined for each wafer or each plurality of wafers, to carry out plasma processing on the wafer. As a result, in the plasma processing carried out on the wafer, the wafer is fabricated with a high degree of reproducibility by suppressing variations in fabricated-line dimension from wafer to wafer without decreasing the throughput.

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Hitachinaka, Japan

Katsumi Setoguchi