Sanyo Electric Co., Ltd.

Katsumi Okawa

Noriaki Sakamoto

Yoshiyuki Kobayashi

Kouji Takahashi

Junji Sakamoto

Eiju Maehara

Shigeaki Mashimo

Yasuhiro Koike

Junichi Iimura

Hidefumi Saito

Soichi Izutani

Yusuke Igarashi

Hirokazu Fukuda

Hiroki Etou

Ryoichi Takahashi

An inverter circuit overcurrent protection device in which an overcurrent detection resistor (Rs) is incorporated in a hybrid integrated circuit, in which a detection voltage from the overcurrent detection resistor (Rs) is divided by voltage dividing resistors (Rand R) and is compared with a reference voltage in an overcurrent detection circuit, for carrying out an overcurrent protection, and an external resistor is connected in series or in parallel with one of the voltage dividing resistors (Rand R) to change a division ratio so that the level of overcurrent protection can be adjusted; and an embodiment wherein, in the vicinity of a current detection terminal, a first pad (P) is connected to a detection voltage from the overcurrent detection resistance, a second pad (P) is connected to a detection voltage from the amplifier, and a third pad (P) is connected to the voltage dividing resistors, and a bonding wire () is connected between the current detection terminal one of said pads, to select one of a plurality of overcurrent protection devices.

Inverted circuit overcurrent protection device and hybrid integrated circuit device with the same incorporated

A semiconductor device is provided wherein conductive paths, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin, and the back surface of the conductive pathis exposed through the insulating resinand sealed. With this arrangement, fractures of the conductive pathsembedded in the insulating resinare suppressed.

Semiconductor device and semiconductor module

In the present invention there is formed a sheet-like board memberhaving conductive coating films, such as first padsand die pads, formed thereon or a sheet-like board memberwhich has been half-etched by using conductive coating films such as first padsand die pads. A hybrid IC can be manufactured by means of utilization of post-processing processes of a semiconductor manufacturer. Further, a hybrid IC can be manufactured without adoption of a support board, and hence there can be manufactured a hybrid IC which is of lower profile and has superior heat dissipation characteristics.

Sheet-like board member and method of manufacturing a semiconductor device

Hybrid integrated circuit device

A method of manufacturing a semiconductor device is described. A board that includes a flat back face, corresponding to a resin sealing area, and a front face that has projections is provided. The projections are formed of a metal that is integral with the board and include (a) a bonding pad provided in an area surrounded by an area that contacts an upper die, (b) a wiring that is integrated with the bonding pad and which extends to a semiconductor element mounting area, and (c) an electrode provided in one body with the wiring. A semiconductor element is mounted on the semiconductor element area and electrically connected to the bonding pad. The board is placed on a lower die and resin is filled into a space formed by the board and upper die. The board is divided into multiple devices such that the projections are separated by removing the board exposed at the back face of the resin.

Board for manufacturing a BGA and method of manufacturing semiconductor device using thereof

After a trenchis formed in a conductive foil, the circuit elements are mounted, and the insulating resin is applied on the conductive foilas the support substrate. After being inverted, the conductive foilis polished on the insulating resinas the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive pathsand the circuit elementsare supported by the insulating resin, without the use of the support substrate. And the interconnects Lto Lrequisite for the circuit are formed, and can be prevented from slipping because of the curved structureand a visor

Circuit device and manufacturing method of circuit device

After a trenchis formed in a conductive foil, the circuit elements are mounted, and the insulating resin is applied on the conductive foilas the support substrate. After being inverted, the conductive foilis polished on the insulating resinas the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive pathsand the circuit elementsare supported by the insulating resinwithout the use of the support substrate. And the interconnects Lto Lrequisite for the circuit are formed, and can be prevented from slipping because of the curved structureand a visor

Circuit device and manufacturing method of circuit device and semiconductor module

In order to enable overheat protection and overcurrent protection as well as temperature detection of an inverter circuit, an inverter circuit comprises a switching circuitcomposed of a plurality of switching elements and a control circuitfor generating a control signal to be inputted into a drive circuitto control a load, a temperature detecting elementfor detecting a change in temperature of the inverter circuit is provided in a temperature detection circuit, and a temperature detection signal which changes according to a change in temperature of said inverter circuit, an overheat abnormal signal outputted upon a rise in temperature to a predetermined temperature or more, and an overcurrent abnormal signal outputted from an overcurrent protection FETare outputted via one commonly used terminal.

Inverter circuit device with temperature detection circuit

A device containing a flat member is provided, having a pattern for a bonding pad, a wiring, and an electrode, by half-etching through the flat member.

In a manufacturing method of a hybrid integrated circuit device of the invention, transfer molding is carried put by positioning a curved surface formed in a back surface of the substrate on a lower mold die side and a burr formed in a main surface of the substrate on an upper mold die side. This utilizes the curved surface to inject thermosetting resin in an arrow direction to pour the thermosetting resin through a below of the substrate. There are no broken fragments of burr in a thermosetting resin at the below of the substrate. As a result, a required minimum resin thickness is secured at the below of the substrate, thus realizing a hybrid integrated circuit device having a high voltage resistance, an excellent heat dissipation property and a high product quality.

Hybrid integrated circuit device and manufacturing method thereof

In a molding process, a hybrid integrated circuit substrate is fixed the position of the substrate in a thickness direction. A leadframe is connected, with an upward inclination, to a hybrid integrated circuit substrate and transported into a mold cavity. By horizontally fixing the leadframe by mold dies, the hybrid integrated circuit substrate inclined upward is urged downward by a pushpin. This can fix the position of the hybrid integrated circuit substrate within the mold cavity and integrally transfer-molded.

Method of manufacturing a hybrid integrated circuit device

A light irradiating device ( ) having the good radiation characteristic comprises a plurality of conductive paths ( ) that are electrically separated, a photo semiconductor chips ( ) fixed onto desired conductive path ( ), and a resin ( ) for covering the photo semiconductor chips ( ) to support the conductive paths ( ) integrally.

Light irradiating device

In a molding process, a hybrid integrated circuit substrate is positionally fixed in a horizontal direction. By abutting the points, where particularly leads having a spacing kept constant continue with a first connection portion, against guide pins provided on a mold die, a hybrid integrated circuit substrate can be positionally fixed. Because the spacing between the particular leads is not relied upon the number of terminals of the hybrid integrated circuit substrate, the mold can be commonly used where the number of terminals is different.

Method of making hybrid integrated circuit device

After a trench is formed in a first conductive foil A, the circuit elements are mounted, and the insulating resin is applied on the laminated conductive foil as the support substrate. After being inverted, a second conductive foil B is etched on the insulating resin as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths and the circuit elements are supported by the insulating resin , without the use of the support substrate. And the interconnects L to L for the circuit are formed, and can be prevented from slipping because of the curved structure and a visor

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Gunma, Japan

Katsumi Okawa