Tokyo Ohka Kogyo Co., Ltd.

Tokyo Electron Limited

Samsung Electronics Co., Ltd.

Tokyo Institute of Technology

Katsumi Ohmori

Tasuku Matsumiya

Ken Miyagi

Tsuyoshi Kurosawa

Daiju Shiono

Takehiro Seshimo

Hidetami Yaegashi

Taku Hirayama

Hitoshi Yamano

Kenichiro Miyashita

Yoshitaka Komuro

Kenichi Oyama

Takahiro Senzaki

Masahito Yahagi

Eun-sung Kim

Naoto Motoike

Toshiaki Hato

Teruaki Hayakawa

Jeong-ju Park

Shi-yong Yi

Seung-chul Kwon

Kazuki Yamada

Kyeong-mi Lee

Masatoshi Yamato

Tsuyosh Kurosawa

A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

Pattern forming method

A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

Pattern forming method for forming a pattern

A method of forming a structure containing a phase-separated structure, the method including applying a block copolymer composition including an organic solvent component (S) and a block copolymer in which a block of polystyrene or a polystyrene derivative is bonded to at least one kind of block to a substrate to form a layer containing the block copolymer; and phase-separating the layer containing the block. The value of an interaction distance Ra(MPa) between the Hansen solubility parameter of the organic solvent component (S) and the Hansen solubility parameter of polystyrene or the polystyrene derivative satisfying the following formula (1).4.1&#x2264;&#x2264;9&#x2003;&#x2003;(1)

Method of producing structure containing phase-separated structure, block copolymer composition, and organic solvent used for block copolymer composition

In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.

Methods of forming patterns of semiconductor devices

A method of producing a structure containing a phase-separated structure, which includes mixing a block copolymer which includes a hydrophobic polymer block and a hydrophilic polymer block and is incapable of forming a phase-separated structure, with a homopolymer compatible with the hydrophilic polymer block or a homopolymer compatible with the hydrophobic polymer block.

Method of producing structure containing phase-separated structure and resin composition for forming phase-separated structure

An undercoat agent including a block copolymer having a plurality of blocks bonded formed on a substrate. The undercoat agent contains a resin component that includes a structural unit having an aromatic ring and a structural unit having no aromatic ring, and the resin component includes a group which can interact with the substrate and does not include a 3 to 7-membered, ether-containing cyclic group; and a method of forming a pattern of a layer containing a block copolymer. The method includes applying an undercoat agent to a substrate to form a layer containing the undercoat agent; forming a layer containing a block copolymer having multiple blocks bonded on a surface of the layer containing the undercoat agent, followed by a phase separation of the layer containing the block copolymer; and selectively removing a phase containing at least one block of multiple blocks constituting the block copolymer.

Undercoat agent and method of forming pattern of layer containing block copolymer

A method of forming a structure containing a phase-separated structure, the method including applying a block copolymer solution to a substrate to form a layer containing a block copolymer and having a film thickness of less than 100 nm; and phase-separating the layer containing the block copolymer, a solvent of the block copolymer solution comprising a poor solvent exhibiting a poor solubility for a homopolymer A of one of the blocks of the block copolymer.

Method of producing structure containing phase-separated structure

A method of producing a structure containing a phase-separated structure, including applying a neutralization film to a substrate to form a layer of a neutralization film; applying a block copolymer having a plurality of polymers bonded thereto, and a weight average molecular weight of 150,000 or more to the layer of the neutralization film, so as to form a layer containing the block copolymer and having a coating film thickness of 23 nm or less; and phase-separating the layer containing the block copolymer.

Method of producing structure containing phase-separated structure, phase separated structure, and block copolymer composition

A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiOfilm on the surface of the first pattern and the substrate; subjecting the SiOto etching such that the SiOfilm remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiOfilm. The resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

Method of forming pattern

A method of producing a structure containing a phase-separated structure, including forming, on a substrate, a layer containing a block copolymer having a block of a polyhedral oligomeric silsesquioxane structure-containing structural unit; forming a top coat film by applying, to the layer containing the block copolymer, a top coat material which undergoes a change in polarity upon heating, and controls a surface energy of the layer containing the block copolymer; and subjecting the layer containing the block copolymer on which the top coat film is formed to phase separation by thermal annealing.

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Kawasaki, Japan

Katsumi Ohmori