Riken Corporation

Ricoh Company, Ltd.

Other

Hamamatsu-Photonics K.k.

Katsumi Midorikawa

Hiroshi Kumagai

Yasufumi Yamada

Koji Sugioka

Shinichiro Aoshima

Masatoshi Fujimoto

Jan J Dubowski

Tohru Kobayashi

Ya Cheng

Toshimitsu Akane

First and second laser beams having respective first and second wavelengths respectively excite palladium isotopes at a ground level to a first excited level then to a second excited level. At first and second excitation steps, palladium isotopes having an odd mass number are selectively excited to the second excited level, with the identity of the ion core state of each of the palladium isotopes retained between the first excited level and the second excited level. The first wavelength and the second wavelength are selected to allow the second excited level to be an autoionization level or, in a case where the second excited level is not the autoionization level, the first wavelength, the second wavelength, and a third wavelength are selected to excite the palladium isotopes at the second excited level to the autoionization level with a third laser beam having the third wavelength at a third excitation step.

Device and method for even-odd separation and ionization of palladium isotopes

An apparatus for processing a three-dimensional structure having a fine three-dimensional shape and a smooth surface is disclosed in which the three-dimensional structure is usable for an optical device. The process method includes depositing a thin layer for absorption of laser light on a flat substrate; depositing a transparent layer on the thin layer for absorption of laser light; and irradiating a process laser light, passing through the transparent layer; in which pulse injection energy of the process laser light is set to be the same as or smaller than the maximum pulse injection energy capable of exposing a surface of the thin layer in front in the incident direction of the process laser light, and to be set the same as or greater than the minimum pulse injection energy capable of removing the transparent layer in rear in the incident direction of the process laser light.

Method and apparatus for processing three-dimensional structure, method for producing three-dimensional shape product and three-dimensional structure

A laser processing method where laser beam for processing is irradiated on a processing object and the laser beam for processing directly removes a part of the processing object. The processing object is made of a glass substrate, metal thin film having high absorption to laser beam for processing is formed on a surface of glass substrate, into which laser beam for processing is made incident, the laser beam for processing is irradiated from a surface of metal thin film, and matter is directly removed by irradiation of laser beam onto the processing object in order to form a region finer than an irradiation region of laser beam for processing on the processing object.

Method for processing by laser, apparatus for processing by laser, and three-dimensional structure

A shape with a substantially perfect circle is obtained as a processed shape such as a modified shape or a worked shape at a light focus point in a cross-section in a direction parallel to an advance direction of a femtosecond laser light beam. A section in a direction perpendicular to an advance direction of a laser light beam emitted from a femtosecond laser () is formed in a predetermined shaped. The laser light of which sectional shape in the direction perpendicular to the advance direction is formed in the predetermined shape is entered into a lens (). The light is focused by the lens inside a transparent material () and processes the inside of the transparent material.

Method and device for processing inside of transparent material

Disclosed is a method for processing a three-dimensional structure having a fine three-dimensional shape and a smooth surface is disclosed in which the three-dimensional structure is usable for an optical device. The process method comprises the steps of depositing a thin layer for absorption of laser light on a flat substrate; depositing a transparent layer on the thin layer for absorption of laser light; and irradiating a process laser light, passing through the transparent layer; in which pulse injection energy of the process laser light is set to be the same as or smaller than the maximum pulse injection energy capable of exposing a surface of the thin layer in front in the incident direction of the process laser light, and to be set the same as or greater than the minimum pulse injection energy capable of removing the transparent layer in rear in the incident direction of the process laser light.

A laser processing method capable of performing fine and highly accurate processing by low energy is obtained. The invention relates to the laser processing method where laser beam for processing () is irradiated on a processing object () and the laser beam for processing () directly removes a part of the processing object (). The processing object () is made of a glass substrate, metal thin film () having high absorption to laser beam for processing () is formed on a surface of glass substrate, into which laser beam for processing () is made incident, the laser beam for processing () is irradiated from a surface of metal thin film (), and matter is directly removed by irradiation of laser beam onto the processing object () in order to form a region finer than an irradiation region of laser beam for processing () on the processing object ().

Method for processing a three-dimensional structure by laser

A method for cooling atoms, having a plurality of magnetic sublevels, involves a laser. Specifically, multiple polarized coherent light sources of a predetermined wavelength are sequentially emitted to atoms to move the electrons of the atoms to a lower magnetic sublevels, hence cooling the atoms. The sequentially emitted laser light can be applied at predetermined time intervals, whereby it becomes possible to laser-cool a variety of atoms including semiconductor atoms, such as silicon and germanium.

Method for laser cooling of atoms and apparatus therefore

The transparent medium processing device comprises: a light control section for performing variable control for the status of the laser beam emitted from the light source section , and a light status measurement section for measuring the status of the laser beam inside the processing target TG. The light control section is adjusted based on the output of the light status measurement section so that the status of the laser beam inside the processing target becomes a desired status. Since the status of the laser beam inside the processing target, which is made of such a transparent medium as glass, is measured by the light status measurement section, and is fed back to the light control section, laser processing can be executed while maintaining an optimum status at a processing point inside the processing target.

Transparent medium processing device

A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.

Growing community of inventors

Wako, Japan

Katsumi Midorikawa