Kabushiki Kaisha Toshiba

Katsumi Egashira

Koji Asakawa

Akira Fujimoto

Hitoshi Sugiyama

Yasuhiko Akaike

Atsuko Yamashita

Kenichi Ohashi

Shunji Yoshitake

Shoichi Washizuka

There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

Method of manufacturing a semiconductor light-emitting element

A semiconductor wafer has a first element forming section, a second element forming section adjoining the first element forming section, and a third element forming section adjoining the second element forming section. The first element forming section has a first supporting substrate, a first buried insulating film formed on the first supporting substrate, and a first active layer formed on the first buried insulating film. The second element forming section has a second supporting substrate, a second buried insulating film formed on the second supporting substrate, and a second active layer formed on the second buried insulating film. The second active layer has a thickness being different from a thickness of the first active layer. The third element forming section has a third active layer.

SOI semiconductor wafer having different thickness active layers and semiconductor device formed therein

Growing community of inventors

Kitakyushu, Japan

Katsumi Egashira