Tokyo Electron Limited

Tokyo Electron Limi Ted

Katsumasa Yamaguchi

Takashi Sameshima

Koji Maekawa

Kensaku Narushima

Hironori Yagi

Kouichi Sekido

Eiichi Komori

Kennan Mo

Nuri Choi

Tsubasa Yokoi

A deposition method includes preparing a substrate having an insulating film formed thereon; forming a molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate; and heat-treating the substrate having the molybdenum film formed on the insulating film, without exposing the substrate to atmospheric air.

Deposition method and deposition apparatus

There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Tungsten film-forming method, film-forming system and storage medium

A film forming method includes forming a cancel layer on a substrate, which is disposed within a processing container and on which a base film is formed, in a pressure-reduced atmosphere, the cancel layer cancelling orientation of the base film, forming an initial metal film by supplying a metal material gas and a boron-containing gas to the substrate on which the cancel layer is formed, and forming a main metal film on the substrate on which the initial metal film is formed.

Film forming method and film forming system

A method of processing each of a plurality of substrates comprises: obtaining a first correction factor based on a first flow rate set value of a mass flow controller and a first measurement value of a mass flow meter; adjusting the first flow rate set value of the mass flow controller with the first correction factor so that the flow rate of the vaporized raw material becomes equal to a target value to process the substrate; obtaining a second correction factor based on a second flow rate set value of the mass flow controller and a second measurement value of the mass flow meter; and adjusting the second flow rate set value of the mass flow controller with the second correction factor so that the flow rate of the vaporized raw material becomes equal to the target value to process the substrate.

Method of processing substrate

There is provided a film forming method including: forming an Al-containing film on a base in a depressurized state; and subsequently, forming an initial tungsten film on the Al-containing film by alternately supplying a BHgas and a WFgas in a repetitive manner in the depressurized state without exposing the Al-containing film to an atmosphere while performing a purge process between the supply of the BHgas and the supply of the WFgas.

Film forming method and substrate processing system

There is provided a gas supply device for vaporizing a raw material inside a raw material container and supplying a raw material gas into a processing vessel together with a carrier gas, including: a mass flow controller connected to an upstream side of the raw material container and configured to control a flow rate of the carrier gas; a flow meter connected to a downstream side of the raw material container; and a control part configured to perform a control so as not to supply the raw material gas into the processing vessel until a detection value of the flow meter with respect to the carrier gas controlled to have a constant flow rate by the mass flow controller is stabilized after replacing the raw material container.

Gas supply device, gas supply method and film forming method

A method of forming a tungsten film on a surface of a target substrate having a base film is performed by repeating a cycle plural times. The cycle includes alternately supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas, with a purge interposed therebetween, into a process container in which the target substrate is accommodated and that is maintained under a depressurized atmosphere. The method includes setting a supply flow rate of the tungsten chloride gas and a time of the cycle such that a ratio of a thickness of the base film etched by repeating the cycle the plural times to a thickness of the base film before repeating the cycle the plural times becomes smaller than a predetermined ratio in a state where an integrated flow rate of the tungsten chloride gas per one cycle is kept substantially constant.

Method of forming film

There is provided a gas supply method for temporarily storing a raw material gas generated by vaporizing a raw material accommodated in a raw material container inside a buffer tank together with a carrier gas and subsequently supplying the raw material gas into a processing container. The gas supply method includes: controlling a flow rate of a gas exhausted from the buffer tank and a flow rate of the raw material gas and the carrier gas filled in the buffer tank, so that a second internal pressure of the buffer tank becomes equal to a first internal pressure of the buffer tank when a process is performed by supplying the raw material gas into the processing container, before supplying the raw material gas into the processing container.

Gas supply method and film forming method

There is provided a film forming method of forming a metal film, which includes: alternately supplying a metal chloride gas and a reducing gas for reducing the metal chloride gas to a substrate arranged inside a processing vessel a plurality of times, wherein the alternately supplying the metal chloride gas and the reducing gas includes a period of time during which a flow rate of the metal chloride gas gradually increases.

Film forming method

A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.

Tungsten film forming method, film forming system and film forming apparatus

A method of filling recesses in a substrate with tungsten includes preparing the substrate within a chamber of a film forming apparatus, performing a first cycle at least once, the first cycle comprising introducing a tungsten-containing precursor gas into the chamber, purging the chamber, introducing a hydrogen-containing gas into the chamber, and purging the chamber, and performing a second cycle at least once after the first cycle is performed at least once, the second cycle comprising introducing the tungsten-containing precursor gas into the chamber, purging the chamber, introducing the hydrogen-containing gas into the chamber, and purging the chamber. A pressure in the chamber when the second cycle is performed is set to a pressure lower than a pressure in the chamber when the first cycle is performed.

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Nirasaki, Japan

Katsumasa Yamaguchi