Nippon Sanso Corporation

Taiyo Nippon Sanso Corporation

Other

Mitsubishi Materials Silicon Corporation

Ube Material Industries, Ltd.

Katsumasa Suzuki

Hiroshi Masusaki

Hiroyuki Hasegawa

Yoshio Ishihara

Tomonori Yamaoka

Koh Matsumoto

Hiroki Tokunaga

Takayuki Satou

Jie Dong

Takashi Watanabe

Takayuki Watanabe

Takashi Kishimoto

Fumio Okada

Shinichi Yamamoto

Kaoru Sakoda

Osamu Misumi

Takayuki Satoh

A granular material having a high strength and a large BET specific surface area composed of porous particles comprising calcium oxide and calcium hydroxide wherein the calcium oxide is contained in an amount of 30 to 80 weight % based on a total amount of the calcium oxide and calcium hydroxide and the porous particles have a BET specific surface area of 40 m/g or more, or composed of porous particles comprising calcium oxide, magnesium oxide, calcium hydroxide, and magnesium hydroxide wherein a ratio of an amount of magnesium to a total of an amount of calcium and an amount of magnesium is in the range of 0.05 to 0.80, a total hydroxide content in the whole particles is in the range of 1 to 20 weight % and the porous particles have a BET specific surface area of 50 m/g or more.

Granular material comprising porous particles containing calcium and/or magnesium

The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times of semiconductor production apparatuses that perform corrosive gas treatment in a reaction chamber, the moisture concentration in reaction chamber is measured with moisture meter connected to the reaction chamber when performing the corrosive gas treatment, and maintenance times of the semiconductor production apparatus are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas during processing while preventing obstruction of piping in a moisture monitoring apparatus and semiconductor production apparatus equipped therewith, a moisture monitoring apparatus, which is equipped with a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end of that pipe which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is at least equipped with pipe heating mechanism that heats the pipe.

Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses

The present invention provides a spectroscopic method for analyzing isotopes which makes it possible to simplify a system for measurement and to identify isotopes with high accuracy and sensitivity and to carry out quantitative analysis. The spectroscopic method for analyzing isotopes uses a semiconductor laser beam having as a wavelength zone a 2000 nm-wavelength band as a beam source of wavelengths of the absorption spectra of the isotopes. A reference gas is used for identification of the isotopes where the gas contains collating components having two wavelengths (W , W ) of well-known absorption spectra in wavelength bands close to the wavelengths (w , w ) of the absorption spectra of the isotopes.

Spectroscopic method for analyzing isotopes by using a semiconductor laser

Spectroscopic method for analyzing a gas by using laser beam

A CVD apparatus is able to efficiently perform purging treatment after maintenance by using for the purge gas a mixed gas of a high thermal conductivity and an inert gas. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times, the moisture concentration in reaction chamber is measured with a moisture meter connected to the reaction chamber when performing a corrosive gas treatment, and maintenance times are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas while preventing obstruction of piping in a moisture monitoring apparatus, a moisture monitoring apparatus, including a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is equipped with a pipe beating mechanism.

CVD apparatus equipped with moisture monitoring

In order to provide a laser spectroscopy system of simple construction and free of the effect of the fringe noise and to provide a laser spectroscopy system in which a reference cell is efficiently installed with minimum cost and space, there is disclosed a laser spectroscopy system comprising: a tunable laser diode source for generating a laser beam used for spectroscopic analysis; a sample cell where a sample gas is introduced; a first photo detector for measuring an intensity of a laser beam transmitted through the sample cell and having a beam receiving face; a beam splitter for splitting a portion of the laser beam from the laser source; and a second photo detector for measuring an intensity of a splitted laser beam from the beam splitter and having a beam receiving face, wherein the at least one of beam receiving faces is tilted to be at a predetermined angle from an axis of laser beam.

Laser spectroscopy system

Growing community of inventors

Tokyo, Japan

Katsumasa Suzuki