Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Nitta Haas Inc.

Katsumasa Kawabata

Koichi Yoshida

Hui Bin Huang

George C Jacob

Henry Sanford-Crane

Shuiyuan Luo

Kazutaka Miyamoto

Yosuke Takei

Akane Uehara

David B James

Bainian Qian

Marty W DeGroot

Hiroyuki Nakano

Wei-Wen Tsai

James T Murnane

Fengji Yeh

Yasuyuki Itai

Shogo Takahashi

Naoko Kawai

Shusuke Kitawaki

The invention provides a porous polyurethane polishing pad that includes a porous matrix having large pores that extend upward from a base surface and open to an upper surface. The large pores extend to the top polishing surface and have lower and upper sections with a vertical orientation. The lower and upper sections are offset in a horizontal direction. Middle-sized pores with a columnar shape and a vertical orientation originate adjacent the middle sections and small pores with a columnar shape and a vertical orientation originate between the middle-sized pores. The pores combine for increasing compressibility of the polishing pad and contact area of the top polishing surface during polishing.

Offset pore poromeric polishing pad

The invention provides a method of forming porous polyurethane polishing pad that includes feeding liquid polyurethane onto a web sheet with a doctor blade while back tensioning the web. Coagulating liquid polyurethane onto the web sheet forms a two-layer substrate. The two-layer substrate has a porous matrix wherein the porous matrix has large pores extending upward from a base surface and open to an upper surface. Spring-arm sections connect lower and upper sections of the large pores.

Method of forming leveraged poromeric polishing pad

The method forms a porous polyurethane polishing pad by coagulating thermoplastic polyurethane to create a porous matrix having large pores extending upward from a base surface and open to an upper surface. The large pores are interconnected with small pores. Heating a press to temperature below or above the softening onset temperature of the thermoplastic polyurethane forms a series of pillows. Plastic deforming side walls of the pillow structures forms downwardly sloped side walls. The downwardly sloped side walls extend from all sides of the pillow structures. The large pores open to the downwardly sloped sidewalls are less vertical than the large pores open to the top polishing surface and are offset 10 to 60 degrees from the vertical direction.

Tapering method for poromeric polishing pad

The porous polyurethane polishing pad includes a porous matrix having large pores that extend upward from a base surface and open to an upper surface. The large pores are interconnected with small pores. The porous matrix is a blend of two thermoplastic polymers. The first thermoplastic polyurethane has by molecular percent, 45 to 60 adipic acid, 10 to 30 MDI-ethylene glycol and 15 to 35 MDI and an Mn of 40,000 to 60,000 and a Mw of 125,000 to 175,000 and an Mw to Mn ratio of 2.5 to 4 The second thermoplastic polyurethane has by molecular percent, 40 to 50 adipic acid, 20 to 40 adipic acid butane diol, 5 to 20 MDI-ethylene glycol and 5 to 25 MDI and an Mn of 60,000 to 80,000 and a Mw of 125,000 to 175,000 and an Mw to Mn ratio of 1.5 to 3.

Thermoplastic poromeric polishing pad

The porous polyurethane polishing pad includes a porous polyurethane matrix having large pores extending upward from a base surface and open to a polishing surface. A series of pillow structures is formed from the porous matrix that include the large pores and the small pores. The pillow structures have a downward surface extending from the top polishing surface for forming downwardly sloped side walls at an angle from 30 to 60 degrees from the polishing surface. The large pores open to the downwardly sloped sidewalls and are less vertical than the large pores. The large pores are offset 10 to 60 degrees from the vertical direction in a direction more orthogonal to the sloped sidewalls.

Tapered poromeric polishing pad

A method for polishing a silicon wafer is provided, comprising: providing a silicon wafer; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 &#x3bc;m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.

Method for chemical mechanical polishing silicon wafers

Growing community of inventors

Kyoto, Japan

Katsumasa Kawabata