Nec Corporation

Katsumasa Hashimoto

Nobuaki Takahashi

Shinichi Miyazaki

Yoshitaka Kyougoku

Yuzo Shimada

Naoji Senba

Hideki Kusamitu

Makoto Ohtsuka

Ikusi Morizaki

A plurality of substrate to which have been flip-chip mounted semiconductor chips are laminated by solder bumps provided for the purpose of lamination. A elastic resin is caused to fill the space between the chip upper surface and the substrate, thus providing a shock-absorbing material layer.

Shock-resistant semiconductor device and method for producing same

A plurality of substrates 1 to which have been flip-chip mounted semiconductor chips 2 are laminated by means of solder bumps 7 provided for the purpose of lamination. A elastic resin is caused to fill the space between the chip upper surface 9 and the substrate 1, thus providing a shock-absorbing material layer 8. By adopting this type of three-dimensional semiconductor modular structure, the shock-absorbing material layer 8 absorbs externally applied vibration and shock, thereby improving the immunity to vibration and shock.

Shock resistant semiconductor device and method for producing same

A three-dimensional memory module includes a plurality of semiconductor device units, every adjacent two of which are stack-connected via through-holes by a bump connecting method. Each of the plurality of semiconductor device units includes a carrier having a circuit pattern and the through-holes connected to the circuit pattern. The semiconductor device unit also includes at least one semiconductor memory chip mounted on the carrier such that the semiconductor memory chip is connected to the circuit pattern, and at least one chip select semiconductor chip mounted on the carrier to be connected to the circuit pattern such that the chip select semiconductor chip can select the semiconductor memory chip.

Stacked carrier three-dimensional memory module and semiconductor device

Growing community of inventors

Tokyo, Japan

Katsumasa Hashimoto