L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Hitachi-Kokusai Electric Inc.

Katsuko Higashino

Yoshiro Hirose

Kazutaka Yanagita

Atsushi Sano

Norikazu Mizuno

Provided are: forming a thin film made of a specific element alone on a substrate by performing a specific number of times a cycle of: supplying a first source to the substrate, the first source containing the specific element and a halogen-group; and supplying a second source to the substrate, the second source containing the specific element and an amino-group, and having amino-group-containing ligands whose number is two or less in its composition formula and not more than the number of halogen-group-containing ligands in the composition formula of the first source.

Method of manufacturing a semiconductor device, substrate processing apparatus and recording medium

There is provided a method of manufacturing a semiconductor device, including: forming a film containing a specific element, nitrogen, and carbon on a substrate, by alternately performing the following steps a specific number of times: a step of supplying a source gas containing the specific element and a halogen element, to the substrate; and a step of supplying a reactive gas composed of three elements of carbon, nitrogen, and hydrogen and having more number of a carbon atom than the number of a nitrogen atom in a composition formula thereof, to the substrate.

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium

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Newark, DE, United States of America

Katsuko Higashino