Seiko Instruments Inc

Katsuki Matsushita

Tadao Iwaki

Tsuneo Yamazaki

Shigeru Senbonmatsu

Ryuichi Takano

Hiroyuki Fujita

A display device having an insulating substrate on which transparent electrodes having display electrode portions and wiring electrodes portions are formed, and another substrate opposed to the insulating substrate. At a portion of the insulating substrate at which the wiring electrode patterns extend across a contour line of the opposing substrate, the wiring electrode patterns are set perpendicular to the end surface of the opposing substrate. Dummy patterns may be provided outside the opposite-end terminal patterns in the group of wiring electrode patterns. In the thus-arranged display device, when the wiring electrodes are plated after assembly of a display element, a short circuit cannot occur on the insulating substrate portion at which the wiring electrode patterns extend across the contour line of the opposing substrate. Pads for contact with a short check probe are arranged in a straight line on the insulating substrate. A low-priced straight probe can therefore be used for a short circuit check.

Display device

A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate. Therefore the semiconductor thin film can integrate a highly fine, dense and compact semiconductor integrated circuit or semiconductor optical element. The semiconductor thin film element has a transparent optical detection region or optical modulation region with 100 million pixels or more.

Semiconductor thin film formed on a supporting substrate

A thin film semiconductor substrate for a display device includes a thin film semiconductor circuit layer formed on a single crystal semiconductor substrate and a support substrate formed over the thin film semiconductor circuit layer. An adhesive layer made of a fluorine-containing epoxy family adhesive is provided between the insulating layer and the support substrate. When the single crystal semiconductor substrate is removed, the yield rate in production of the thin film semiconductor substrate is greatly improved.

Growing community of inventors

Tokyo, Japan

Katsuki Matsushita