Kabushiki Kaisha Toshiba

Kioxia Corporation

Katsuki Matsudera

Masaru Koyanagi

Kazuhide Yoneya

Toshiki Hisada

Natsuki Kushiyama

Mikihiko Ito

Takahiko Hara

Kaoru Nakagawa

Hiroyuki Nagashima

Yuichiro Mitani

Yoshikazu Harada

Kazunori Kanebako

Jiezhi Chen

Yusuke Tanefusa

Koichi Shinohara

Manami Kudou

Tadashi Onizawa

Ian Christopher Gamara

Junichiro Shirai

Noritaka Kai

Kuniharu Takahashi

According to a certain embodiment, the semiconductor memory device includes a memory cell array, a control circuit, and a data register storing an erase verify fail flag. An erase target block is divided into word line groups. The control circuit includes: a counter configured to count the number of the erase verify fail flags to be output as a count value for each group; a plurality of counter registers configured to store the count value for each group; an arithmetic circuit configured to take a difference of the plurality of count values respectively stored in the plurality of counter registers and to output a result of the difference as a number of second fail flags; and a comparator configured to compare the number of criteria of the erase verify fail flag and the number of the second fail flags to be output as a memory state detected result.

Semiconductor memory device and memory state detecting method

According to an embodiment, a semiconductor device includes an error corrector, a read controller, and a majority processor. The error corrector is configured to perform error correction on data read from a storage, and output the number of errors contained in the data when errors cannot be corrected by the error correction. The read controller is configured to read pieces of data from a first address in the storage according to respective read conditions, select, from the read conditions, a read condition corresponding to a smallest of the numbers of errors obtained by the error correction performed on the pieces of data corresponding to the respective read conditions, and perform reading from the first address multiple times according to the selected read condition. The majority processor is configured to perform a majority process between a plurality of pieces of data obtained by the multiple times of reading.

Semiconductor device and reading method

According to one embodiment, a main driver is configured to shift the level of a differential signal. A bypass circuit is configured to bypass current flowing through the main driver in such a manner as to contain the change amount of current running through the main driver flowing from a high power supply potential to a low power supply potential within a fixed range upon transition between an operating state and a standby state of the main driver.

Differential output buffer

A semiconductor integrated circuit has a squelch circuit which has a first noninverting input terminal and a first inverting input terminal, which compares differential amplitude between a signal which is input to the first noninverting input terminal and a signal which is input to the first inverting input terminal with a preset threshold, and which outputs a signal depending upon a result of the comparison. The semiconductor integrated circuit has a first switch circuit between a first reception terminal and the first noninverting input terminal. The semiconductor integrated circuit has a second switch circuit between a second reception terminal and the first inverting input terminal. The semiconductor integrated circuit has a third switch circuit between the first reception terminal and the first inverting input terminal. The semiconductor integrated circuit has a fourth switch circuit between the second reception terminal and the first noninverting input terminal.

Semiconductor integrated circuit having a squelch circuit

A semiconductor integrated circuit includes a control signal generating circuit which is configured to set, at least at a time of a first state, first and fifth control signals at a first voltage level, and second, third and fourth control signals at a second voltage level, and to set, at a time of a second state, the first to fourth control signals at the first voltage level, and the fifth control signal at an arbitrary voltage level.

Semiconductor integrated circuit

A semiconductor device comprises a board; a semiconductor chip; a memory controller operative to control the semiconductor chip; and a power supply chip having a capacitor. The semiconductor chip is stacked on the board. The memory controller and the power supply chip are stacked on the semiconductor chip. The capacitor is used to stabilize the voltage applied to the semiconductor chip.

Semiconductor device

A control circuit receives an external control signal in synchronism with an internal clock and generates an address signal and internal control signals. A data multiplexer has a plurality of input parallel lines and a plurality of output parallel lines and is switched to one of a first output state and a second output state in accordance with the internal control signal. In the first state, the data multiplexer outputs parallel data, which is input to the plurality of input parallel lines and read out from the memory core unit, to the plurality of output parallel lines corresponding to the plurality of input parallel lines. In the second state, the data multiplexer selects 1-bit data of the parallel data input to the plurality of input parallel lines and outputs the 1-bit data to the plurality of output parallel lines. A conversion circuit converts the parallel data into serial data.

Data input/output circuit included in semiconductor memory device

A semiconductor memory includes a converter configured to convert each read-data of plural bits read from a memory core into serial data, respectively, in synchronization with a read clock to generate converted read-data. An output register holds the converted read-data in synchronization with the read clock. A selector selects one bit from each plural bits of the converted read-data, in accordance with a control data, and to supply the selected bit to the output register.

Semiconductor memory

An input/output circuit inputs/outputs serial data. A register section comprises a first and a second register. The first register converts the serial data into parallel data. The second register converts parallel data into serial data. A first control signals supply a conversion timing for each bit when the serial data are converted into the parallel data. A second control signals supply a conversion timing for each bit when the parallel data are converted into the serial data. The signal generating circuit controls a timing of rise or fall of the first control signals and sets which of the memory cells should store a value for each bit, of the serial data, and controls a timing of rise or fall of the second control signals and sets which number of value of the serial data should be the value for each bit, of the parallel data read from the memory cells.

Semiconductor memory device inputting/outputting data synchronously with clock signal

An MOS-type semiconductor integrated circuit has two MOS transistors of the opposite conductivity channel types connected in series between a high-voltage potential terminal and a ground potential terminal. Those two MOS transistors constitute an inverter and their gates are connected together to an input node. As output nodes, first and second nodes are provided with a current path in between which includes transistors whose gates are connected to the high-voltage potential terminal. A current path including the first transistor which constitutes a switch is inserted between the first node and the output node, and a current path including the second transistor and a barrier transistor is inserted between the second node and the output node. The gates of the first and second transistors are respectively connected with complementary clock signals. The bate of the barrier transistor is connected to the high-voltage potential terminal.

MOS-type semiconductor integrated circuit

A semiconductor integrated circuit includes first and second MOS transistors and a capacitor. The first MOS transistor has a drain connected to an output terminal, a gate and a source. The second MOS transistor has a gate, a drain connected to the source of the first MOS transistor and a source and has the same conductivity type as the first MOS transistor. The capacitor has one electrode connected to the gate of the first MOS transistor and the other electrode connected to a node whose potential changes in a complementary fashion with respect to the drain potential of the first MOS transistor and functions to cancel out an influence, caused by the coupling of a mirror capacitor which exists between the gate and drain of the first MOS transistor, affecting the gate potential of the first MOS transistor.

Semiconductor integrated circuit having output buffer

A semiconductor memory device comprises a memory cell array, a first latch circuit group, and a second latch circuit group. The first latch circuit group sequentially outputs n/2 bit read data of n-bit read data from the memory cell array in response to sequentially shifted read control signals. The second latch circuit group sequentially outputs the remaining n/2 bit read data in response to the sequentially shifted read control signal.

Semiconductor memory device

A semiconductor memory device is provided which ensures the symmetry of memory data transmission time and a high-speed operation and has large write/read operation margin with no need of increasing the chip area. By placing a horizontally long peripheral circuit section in the middle in the vertical direction of a semiconductor chip, placing a vertically long shift register section above and below and perpendicularly to the peripheral circuit section, and making the memory core and shift register arrangement symmetrical in the horizontal direction, the data/signal lines between the memory core and the shift register section can be made short and the symmetry of the interconnections can be maintained, which allows the implementation of a high-speed and large-margin semiconductor memory device. In addition, a faster semiconductor memory can be obtained by forming the shift register section by stacking shift registers each corresponding to a data block and selecting the order in which the shift registers are stacked so that the length of interconnections between the peripheral circuit and the shift register is minimized.

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Kawasaki, Japan

Katsuki Matsudera