Showa Denko K.k.

Toyoda Gosei Co., Ltd.

Katsuki Kusunoki

Hisao Sato

Takashi Udagawa

Kazuhiro Mitani

Hisayuki Miki

Yasuhito Urashima

Kenji Yakushiji

A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a semiconductor layer containing a p-type cladding layer containing p-type impurities (Mg) and laminated on the light emitting layer. The light emitting layer has a multiple quantum well structure including first to fifth barrier layers and first to fourth well layers, and one well layer is sandwiched by two barrier layers. The thickness of the p-type cladding layeris set at less than 3-times the thickness of each of the first to fourth well layer.

Semiconductor light emitting element and light emitting device

A semiconductor light emitting element includes: an n-type semiconductor layer; a light emitting layer alternately laminating plural barrier layers and plural well layers; and a p-type semiconductor layer, wherein the light emitting layer includes three or more well layers and four or more barrier layers, each well layer being sandwiched by the barrier layers, one barrier layer contacting the n-type semiconductor layer, and another barrier layer contacting the p-type semiconductor layer, the well layers include plural n-side well layers from the n-type semiconductor layer side and one p-side well layer on the p-type semiconductor layer side, and a V-shaped concave portion including inclined surfaces is generated in the light emitting layer, and in at least one of the n-side well layers, a concentration of atoms of In on the inclined surface is not more than 50% of a concentration of atoms of In in the n-side well layer.

Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a p-type cladding layer containing p-type impurities and laminated on the light emitting layer. The light emitting layer has a barrier layer including first to fifth barrier layers and a well layer including first to fourth well layers, and has a multiple quantum well structure to sandwich one well layer by two barrier layers. The light emitting layer is configured such that the first to fourth well layers are set to have a composition to emit green light, and the first barrier layer is doped with n-type impurities, whereas the other barrier layers are not doped with n-type impurities.

Provided is a method for manufacturing a semiconductor light-emitting element having a narrow wavelength distribution and comprising a substrate and a group III compound semiconductor layer formed thereon, the substrate being made of a material different from the compound semiconductor constituting the semiconductor layer. The method for manufacturing a semiconductor light-emitting element having a group III compound semiconductor layer is characterized by comprising a semiconductor layer-forming step wherein a group III compound semiconductor layer having a total thickness of not less than 8 &#x3bc;m is formed on a substrate () having a diameter D, a thickness and an amount of warpage H within the range of &#xb1;30 &#x3bc;m. The method is also characterized in that the diameter D and the thickness d of the substrate () satisfy the following formula (1):0.7&#xd7;10&#x2266;()&#x2266;1.5&#xd7;10&#x2003;&#x2003;(1).

Method for manufacturing semiconductor light-emitting element

A compound semiconductor light-emitting device has a light-emitting layer, on a substrate, wherein at least a part of a substrate portion of the device side surface has recessed portions in a side direction of the device. A method of producing the compound semiconductor light-emitting device includes the steps of: (a) forming a compound semiconductor layer including a light-emitting layer of an n-type or p-type compound semiconductor on a wafer that serves as a substrate, (b) arranging a negative electrode and a positive electrode at predetermined positions for passing a drive current through the light-emitting layer, (c) forming a separation zone for separating the individual light-emitting devices, (d) perforating many small holes linearly in the wafer that serves as the substrate along the separation zone, and (e) dividing the wafer into individual light-emitting devices along the separation zone, whereby a rugged shape which is periodical in a side direction and is undulating in a plane or cross section, is formed on a substrate side surface of the light-emitting device.

Method for forming compound semiconductor light-emitting device

An object of the present invention is to provide a compound semiconductor light-emitting device having side surfaces of large surface area to improve the efficiency for outwardly transmitting the emitted light. Another object of the present invention is to provide a technology capable of easily forming the side surfaces with large surface area without using a cutting tool and without the need of taking a trouble to impart mechanical damage. The inventive compound semiconductor light-emitting device has a light-emitting layer, on a substrate, wherein at least a part of a substrate portion of the device side surface has recessed portions in a side direction of the device. The inventive method of producing compound semiconductor light-emitting device comprises the steps of: (a) forming a compound semiconductor layer including a light-emitting layer of an n-type or p-type compound semiconductor on a wafer that serves as a substrate, (b) arranging a negative electrode and a positive electrode at predetermined positions for passing a drive current through the light-emitting layer, (c) forming a separation zone for separating the individual light-emitting devices, (d) perforating many small holes linearly in the wafer that serves as the substrate along the separation zone, and (e) dividing the wafer into individual light-emitting devices along the separation zone.

Compound semiconductor light-emitting device

The inventive production method of a compound semiconductor light-emitting device (LED)s wafer comprises a step of forming a protective film on the top and/or bottom surface of a compound semiconductor LEDs wafer, where the devices being regularly and periodically arranged with separation zones being disposed; a step of forming separation grooves by means of laser processing in the separation zones of the surface on which the protective film is formed, while a gas is blown onto a laser-irradiated portion; and a step of removing at least a portion of the protective film, which steps are performed in the above sequence.

Production method of compound semiconductor light-emitting device wafer

A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular to a normal line relative to a principal plane of the substrate. A method for the production of a nitride semiconductor light-emitting device that includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate includes the steps of covering a first surface of the nitride semiconductor layer with a mask provided with a prescribed pattern, removing the nitride semiconductor layer in regions to be divided into component devices till the substrate, subjecting the nitride semiconductor layer to wet-etching treatment and dividing the nitride semiconductor layer into the component devices.

Nitride semiconductor light-emitting device and method for fabrication thereof

A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride semiconductor layer of first conductive type formed on the front surface of the transparent crystal substrate, a second Group III nitride semiconductor layer of second conductive type which is opposite from the first conductive type, a light-emitting layer made of a Group III nitride semiconductor between the first and second Group III nitride semiconductor layers, and a plate body including fluorescent material, attached onto the back surface of the transparent crystal substrate.

Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same

An object of the present invention is to provide a method of producing a Group III nitride semiconductor device having a chip form which is pentagonal or more highly polygonal maintaining good area efficiency and at a low cost. The inventive method of producing a Group III nitride semiconductor device having a chip shape which is a pentagonal or more highly polygonal shape comprises a first step of epitaxially growing a Group III nitride semiconductor on a substrate to form a semiconductor wafer; a second step of irradiating said semiconductor wafer with a laser beam to form separation grooves; a third step of grinding and/or polishing the main surface side differently from the epitaxially grown main surface of the substrate; and a fourth step of division into individual chips by applying stress to said separation grooves.

Production method for semiconductor device

A Group III nitride semiconductor light-emitting device includes a stacked structureformed on a crystal substrate () to be removed from it and including two Group III nitride semiconductor layersandhaving different electric conductive types and a light-emitting layerwhich is stacked between the two Group III nitride semiconductor layers and which includes a Group III nitride semiconductor, and a plate bodymade of material different from that of the crystal substrate and formed on a surface of an uppermost layer which is opposite from the crystal substrate that is removed from the stacked structure.

Growing community of inventors

Ichihara, Japan

Katsuki Kusunoki