Sony Corporation

Sony Semiconductor Solutions Corporation

Katsuji Matsumoto

Shuichi Oka

Shusaku Yanagawa

Hiizu Ootorii

Kiwamu Adachi

Shinji Rokuhara

Takeshi Kodama

Takahiro Igarashi

Shun Mitarai

Masashi Yanagita

Izuho Hatada

Kei Satou

Kazunari Saitou

A semiconductor device includes: a semiconductor substrate; a channel layer on the semiconductor substrate; a barrier layer on the channel layer; a gate electrode on the barrier layer via a gate insulating film; a source electrode and a drain electrode on the channel layer with the gate electrode interposed therebetween; a substrate opening that penetrates the channel layer and exposes the semiconductor substrate; an insulating film provided from upper parts of the gate electrode, the source electrode, and the drain electrode to an inner side of the substrate opening; and a wiring line layer on the insulating film, and electrically coupled to one of the gate electrode, the source electrode, and the drain electrode via an opening on the insulating film, in which at least a portion of the substrate opening is in an activation region in which the gate electrode, the source electrode, and the drain electrode are provided.

Semiconductor device, communication module, and semiconductor device manufacturing method

A method of manufacturing a mounting substrate according to an embodiment of the present technology includes the following three steps:

Mounting substrate and method of manufacturing the same

There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.

Radiation detector, imaging unit, and imaging and display system

A semiconductor device includes a first semiconductor electronic component which includes a pad electrode, a solder bump, and a metal layer between a pad and solder that is configured to have an underlying metal layer formed between the pad electrode and the solder bump and connected to the pad electrode, and a main metal layer formed on the underlying metal layer, and in which the main metal layer has an eave portion at an outer edge portion thereof.

Semiconductor device and manufacturing method thereof

A device that comprises a plurality of circuit elements on a substrate; a shielding element between at least two of the plurality of circuit elements; and a bonding element that electrically connects the shielding element to a grounding circuit of a semiconductor chip that is on the substrate.

Circular shield of a circuit-substrate laminated module and electronic apparatus

Disclosed herein is an inductor module including a substrate functioning as a printed wiring board or an interposer; an IC mounting part formed on a surface of the substrate; an inductor which is formed in the substrate at such a position as to overlap with the IC mounting part on a plan-view basis and which is connected to an IC mounted on the IC mounting part; and a magnetic body including a magnetic material selected from among a NiZn ferrite, a NiZnCu ferrite and a Ba ferrite, the magnetic body being disposed intermediately between the IC mounting part and the inductor.

Inductor module, silicon tuner module and semiconductor device

A circuit board laminated module includes: a first circuit board having a multi-layer structure in which ground layers are provided in a plurality of layers; a second circuit board mounted on the first circuit board; and a semiconductor chip mounted on the second circuit board, wherein in the first circuit board, a noise guiding through via which guides an electromagnetic noise generated in the semiconductor chip to a lower layer side is provided on a side different from a circuit portion or a circuit element desired to be protected against influence of the electromagnetic noise in a surrounding direction of an occurrence place of the electromagnetic noise.

Growing community of inventors

Kanagawa, Japan

Katsuji Matsumoto