Ngk Insulators, Inc.

Katsuji Iida

Takeshi Sakuma

Tatsuhiko Hatano

Yuichiro Imanishi

Naohiro Shimizu

Wataru Shionoya

Tatsuhiko c/o IPD Ngk Insulators Ltd Hatano

Takeshi c/o IPD Ngk Insulators Ltd Sakuma

A high-voltage pulse generating circuit has an inductor, a first semiconductor switch, and a second semiconductor switch which are connected in series between opposite terminals of a DC power supply unit, and a diode having a cathode terminal connected to a terminal of the inductor which has another terminal connected to an anode terminal of the first semiconductor switch, and an anode terminal connected to a gate terminal of the first semiconductor switch. The inductor stores an induction energy when the first semiconductor switch is rendered conductive by a turn-on of the second semiconductor switch, and generates a high-voltage pulse when the first semiconductor switch is turned off by a turn-off of the second semiconductor switch.

High-voltage pulse generating circuit

A simple and less expensive high voltage pulse generating circuit including a low voltage direct current voltage source having one output terminal connected to another output terminal via a series circuit of a first switch with a low withstand voltage, an inductance storing inductive energy and a second switch with a high withstand voltage, and a branch circuit including a free-wheel diode connected between the other output terminal of the direct current voltage source and a common connection point between the first switch and the inductance. After storing inductive energy in the inductance by turning &ldquo;on&rdquo; the first and second switches, these first and second switches are turn &ldquo;off&rdquo; to commutate the energy stored in the inductance into a capacitive load connected across the second switch to charge the load abruptly and generate a high voltage pulse having a very narrow width without using a complicated and expensive magnetic compression circuit.

Circuit for generating high voltage pulse

A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section formed by an n silicon substrate , p gate regions formed in one surface of the substrate, a p anode region formed in the other surface of the substrate, a main diode section having a cathode region formed by the silicon substrate and an anode region formed in the one surface of the substrate, and a series arrangement of diodes including plural p anode regions , plural n cathode contact regions formed in the first surface of the substrate, and plural conductive layers connecting these anode regions and cathode contact legions successively. An anode and a cathode of the series arrangement of diodes are connected to a cathode electrode and an anode electrode of the thyristor section. Each of diodes in the series arrangement has a breakdown voltage lower than that of the thyristor section.

Semiconductor device with reverse conducting faculty

A switching circuit for generating pulsed power including a plurality of capacitors connected in parallel with first and second output terminals, a plurality of series circuits of a primary conductor and a static induction thyristor connected in parallel with respective capacitors, a plurality of magnetic cores with which the primary conductors are magnetically coupled, respectively, and a series arrangement of a plurality of secondary conductors each being magnetically coupled with respective magnetic cores, both ends of the series arrangement being connected to first and second output terminals, respectively.

Growing community of inventors

Nagoya, Japan

Katsuji Iida