Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Katsuji Fujita

Shigeru Komatsu

Michio Nakamura

Shin-ichi Imai

Yoshio Wada

A TAB film comprises a resin film and a plurality of leads provided on the resin film to extend from a side of the resin film, each of the plurality of leads having a bonding portion at an end portion, the plurality of leads providing a plurality of multilevel structure for every adjacent two leads at an extended portion extending from the side of the resin film so as to expose the bonding portion of each of the adjacent two leads.

Semiconductor device having multilevel tab leads

Since the resistor is inserted between each of the emitters of the transistors to which the comparison voltage is applied and each of the collectors of the differential pair of transistors, a positive feedback is applied at different points where a differential input voltage is increased from the negative and it is decreased from the positive, and thus the voltage comparator circuit has the hysteresis characteristics. It is therefore possible to reliably have the hysteresis characteristics of a narrow range of voltage of 100 mV or less (for example, several tens of millivolts) without increasing the number of elements in use or depending upon the value of k.multidot.T/q (k is the Boltzmann's constant, T is an absolute temperature, and q is an amount of charge of electrons).

Voltage comparator circuit having hysteresis characteristics of narrow

A semiconductor protective device has a semiconductor substrate of one conductivity type, the first island region being of a conductivity type opposite to that of the semiconductor substrate; second and third regions formed in a surface layer of the first region and being of the same conductivity type as that of the semiconductor substrate; a first transistor emitter region formed in the surface region of the second region and being of a conductivity type opposite to that of the semiconductor substrate; a low-resistance region formed across the second region and the third region; a first electrode formed on the first transistor emitter region; a second electrode; a third electrode connected to the second electrode by the low-resistance region; a first wiring layer connecting the first electrode and the third electrode and connected to an external terminal, the resistance of the semiconductor region between the first electrode and the first transistor emitter region being lower than that of the semiconductor region between the first electrode and the third electrode; and a second wiring layer connected between an internal circuit and the second electrode. By a combination of resistors and bipolar transistors, the semiconductor protective device can absorb both positive and negative external surge inputs, thereby protecting the internal circuit.

Semiconductor protective device

A semiconductor device comprising a semiconductor substrate having at least two resistor elements, wherein said resistor elements have a specific resistance ratio relative to each other, an insulation layer formed on a major surface of said semiconductor substrate, a circuit wiring layer formed on said insulation layer covering a portion of said insulation layer which corresponds to at least one of said resistor elements, and a dummy wiring layer made of the same material as that of the circuit wiring layer and formed on the insulation layer covering that portion of said insulation layer which corresponds to the resistor element or elements not covered by said circuit wiring layer, and where the ratio of an overlapping area of one resistor element in said circuit wiring layer and an overlapping area of the other resistor element and said dummy wiring layer is equal to a resistance ratio of said resistor elements.

Growing community of inventors

Yokohama, Japan

Katsuji Fujita