Sumitomo Electric Industries, Limited

Sumitomo Electric Hardmetal Corp.

The University of Toyama

National University Corporation Universit of Toyama

Katsuhito Yoshida

Kazuwo Tsuji

Tetsuo Nakai

Shigeru Yoshida

Kiichi Meguro

Yuichiro Seki

Junichi Shiraishi

Nozomu Kawabe

Yoshiyuki Hirose

Manabu Mizutani

Michiko Matsukawa

Kenichi Watatani

Koichi Sogabe

Yasunobu Ogata

Daisuke Murakami

Takehisa Yamamoto

Hideaki Awata

Sadamu Ishidu

Shinji Matsukawa

Seiji Saikawa

Toshiya Takahashi

Kenichi Kurisu

Takahisa Iguchi

Hideaki Morigami

Kazuo Tsuji

Noboru Uenishi

Yuka Kondo

Tatsuya Kyotani

Fuminori Higuchi

Yasushi Itoh

Takahiro Awaji

Michinari Asano

A magnesium alloy containing Al, Sr, Ca, and Mn, with the balance being Mg and inevitable impurities, the magnesium alloy having: a structure having an &#x3b1;-Mg phase, and a precipitate dispersed in at least one of a grain boundary of the &#x3b1;-Mg phase and a cell boundary, the precipitate including: at least one phase selected from a group A consisting of an AlSr phase, an AlSr phase, a (Mg, Al)Sr phase, and a (Mg, Al)Sr phase; and at least one phase selected from a group B consisting of an AlCa phase and a (Mg, Al)Ca phase, the magnesium alloy having, in a cross section, a total area rate of a group A precipitate and a group B precipitate of greater than or equal to 2.5% and less than or equal to 30%.

Magnesium alloy and magnesium alloy member

A magnesium alloy is provided that includes: 5.0 mass % or more and 15.0 mass % or less of Al; 2.5 mass % or more and 7.0 mass % or less of Sr; 0.05 mass % or more and less than 3.0 mass % of Ca; and 0.1 mass % or more and 0.6 mass % or less of Mn, with a remainder including Mg and inevitable impurities.

Magnesium alloy

The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 &#x3bc;m and not more than 10 &#x3bc;m and an average length of roughness profile elements RSm of not less than 3.1 &#x3bc;m and not more than 5.4 &#x3bc;m, and that the diamond layer has a plurality of cavities at a portion bordering on the base material.

Diamond coated tool

The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 &#x3bc;m and not more than 10 &#x3bc;m and an average length of roughness profile elements RSm of not less than 1 &#x3bc;m and not more than 100 &#x3bc;m, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.

A sintered compact contains cubic sialon, &#x3b2;-sialon, and at least one of a first component and a second component. The first component is at least one element selected from the group consisting of iron, cobalt, nickel, and group 4 elements, group 5 elements, and group 6 elements of the periodic table. The second component is at least one compound containing at least one element selected from the group consisting of group 4 elements, group 5 elements, and group 6 elements and at least one element selected from the group consisting of carbon, nitrogen, and boron.

Sintered compact, cutting tool formed using sintered compact, and method for manufacturing sintered compact

An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 &#x3bc;m and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.

Optical component and method for manufacturing same

A diamond electrode includes a conductive silicon substrate having a plurality of pores. The diamond electrode also includes a conductive diamond covering the conductive silicon substrate. The inner wall surfaces of the plurality of pores are at an angle of 60&#xb0; to 85&#xb0; with respect to a substrate of the conductive silicon substrate.

Diamond electrode, method for producing same, and electrolytic cell

This invention relates to a high thermal conductivity composite material which comprises diamond particles and a copper matrix useful as electronic heat sinks for electronics parts, particularly for semiconductor lasers, high performance MPUs (micro-processing units), etc., also to a process for the production of the same and a heat sink using the same. According to the high thermal conductivity diamond sintered compact of the present invention, in particular, there can be provided a heat sink having a high thermal conductivity as well as matching of thermal expansions, most suitable for mounting a large sized and high thermal load semiconductor chip, for example, high output semiconductor lasers, high performance MPU, etc. Furthermore, the properties such as thermal conductivity and thermal expansion can freely be controlled, so it is possible to select the most suitable heat sink depending upon the features and designs of elements to be mounted.

Sintered diamond having high thermal conductivity and method for producing the same and heat sink employing it

Polycrystal diamond tool

Diamond sintered compact and a process for the production of the same

A polycrystal diamond tool is provided whose heat resistance, strength and anti-adhesion property are improved by modifying the porosity of a diamond sintered compact and which comprises a diamond sintered compact, sintered under ultra-high pressure and high temperature, brazed onto a tool substrate, in which the cutting edge vicinity part consists of 85 to 99 volume % of the diamond sintered compact material consisting of diamond grains bonded with each other and the balance of pores, and the other part than the cutting edge vicinity part consists of diamond grains and the balance of a brazing material.

Synthesis of diamond by the so-called thin solvent film method is improved to obtain diamond crystals with a large grain size and good quality in an economical manner. To this end, using a reaction system comprising diamond seed crystal, a carbon source and a solvent metal, one or more masses of the solvent metal are arranged independently of each other and the diamond seed crystals are arranged in such a manner that one surface of the diamond seed crystal is contacted with each solvent metal mass.

Method of synthesizing diamond

An ohmic electrode for n-type cubic boron nitride is disclosed. The electrode is made of two thin films; and the first is at least one alloy material selected from a group consisting of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, and the second is at least one metallic material selected from a group consisting of Ni, Cr, Mo and Pt. A process for producing an ohmic electrode for n-type cBN is disclosed. The process is comprised of the following steps: providing a thin film of at least one alloy selected from Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, the weight ratio of Si and Ge being from 0.1 to 35% by weight, on n-type cBN; providing a thin film of at least one metal selected from Ni, Cr, Mo and Pt on the thin alloy film; and subjecting the type cBN having the films thus provided to a heat-treatment process in an inert gas or in a vacuum at a temperature ranging from 350.degree. C. to 600.degree. C.

Process for manufacturing an ohmic electrode for n-type cubic boron

Ohmic electrode for n-type cubic boron nitride and the process for

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Itami, Japan

Katsuhito Yoshida