Hitachi, Ltd.

Hitachi Instruments Engineering Co., Ltd.

Katsuhisa Usami

Satoshi Shigematsu

Takashi Aoyama

Takao Imagawa

Isao Ishikawa

Koichi Nishioka

Hiroshi Kamio

Kazuhiro Ogawa

Atsushi Hiraiwa

Kishio Hidaka

Satoru Ogihara

Satoru Ito

Kunihiro Maeda

Shigeru Takahashi

Naohiro Momma

Shigeyoshi Nakamura

Kiichiro Mukai

Toshie Yaguchi

Ryo Hiraga

Yasuhiro Mochizuki

Seiki Harada

Osamu Asai

Yukio Takeda

Masahiro Tomita

Takeo Kamino

Shin-ichi Muramatsu

Michiyasu Itoh

Seiichi Iwata

Takeo Yoshimi

Magnetoresistive and spin valve heads have a layered structure. Common to each of the layered structures of these heads is the combination of a soft-magnetic layer of essentially NiFe near a spacer layer of essentially Ta, which is used for insuring (,) crystal orientation of the NiFe layer. An isolate layer is interposed between the spacer layer and the soft-magnetic layer to prevent a diffusion boundary from being created at the interface of these layers which tends to degrade the soft-magnetic property of the NiFe layer, especially when the thickness of the soft-magnetic layer is 10 and nm or less. The isolate layer is one of a composition in which the principal component is a magnetic element that is not solid soluble with Ta, a composition in which the principal component is a non-magnetic element that is not solid soluble with Ni and Fe, a composition in which the principal component is at least one of the elements of Co, Fe, Ti, V, Zr, Nb, Mo, Hf, W, Tc, Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au; or a composition in which the principal component is of Co,Fe,, where 20&gE;X>O. The isolate layer has a structure that is amorphous, an fcc structure.

Magnetic head

Magnetoresistive and spin valve heads have a layered structure. Common to each of the layered structures of these heads is the combination of a soft-magnetic layer of essentially NiFe near a spacer layer of essentially Ta, which is used for insuring (111) crystal orientation of the NiFe layer. An isolate layer is interposed between the spacer layer and the soft-magnetic layer to prevent a diffusion boundary from being created at the interface of these layers which tends to degrade the soft-magnetic property of the NiFe layer, especially when the thickness of the soft-magnetic layer is 10 and nm or less. The isolate layer is one of a composition in which the principal component is a magnetic element that is not solid soluble with Ta, a composition in which the principal component is a non-magnetic element that is not solid soluble with Ni and Fe, a composition in which the principal component is at least one of the elements of Co, Fe, Ti, V, Zr, Nb, Mo, Hf, W, Tc, Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au; or a composition in which the principal component is of Co.sub.(100-x) Fe.sub.(x), where 20.gtoreq.X&gt;O. The isolate layer has a structure that is amorphous, an fcc structure.

A method of operating an electron microscope under a high temperature and the electron microscope are provided. The electron microscope can stably set and efficiently heat a sample to observe and measure high temperature physical properties such as phase transformation, phase transition and the like required for development of a heat resistant material. In the method of operating the electron microscope and the electron microscope, a sample to be observed is set so as to position at a central hole of a double spiral flat filament, the detachable heating stage is fixed to the heating holder using screws of a pivot, and the heating stage is tilted by vertical movement of a crank-shaped arm. The heating stage and the arm are insulated from each other by an insulating body, and current from a power source is conducted by a conductor wire to heat the filament.

Electron microscope

TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.

Thin film semiconductor device having inverted stagger structure, and

A sintered silicon carbide body having a high thermal conductivity and a high electrical insulation without any drop substantially throughout the sintered body is produced from a powdery silicon carbide composition comprising at least 90% by weight of silicon carbide powders having an average particle size of not more than 10 .mu.m and 0.01 to 4% by weight of powders of beryllium or its compound having a particle size of not more than 30 .mu.m in terms of beryllium atom, a nitrogen content of the composition being not more than 500 ppm.

Powdery silicon carbide composition for sintering

A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.

Semiconductor device with high density low temperature deposited Si.sub.w

A charged-particle beam correction arrangement for a charged-particle analyzer having deflecting electrodes which focus charged particles emitted from a sample onto a center axis, an extension thereof, or onto an identical circumference with its center on the axis, a slit which is disposed at the focus point, and an energy analyzer whose object point lies at the focus point. The charged-particle beam correction arrangement is disposed axially symmetrically in the vicinity of the path of the charged particles between the sample and the slit to correct a deformation in the focusing of the charged-particle beam. BACKGROUND OF THE INVENTION

Charged-particle analyzer

An electrostatic charged-particle analyzer includes a deflecting electrode system which focuses charged particles emitted from a sample by irradiating the sample with a primary beam, the particles being focused on the axis of the primary beam or on an identical circumference about the axis, and a cylindrical mirror type analyzer whose object point is the focusing point, whereby the accepted solid angle for the charged particles is made large.

Electrostatic charged-particle analyzer

Growing community of inventors

Hitachi, Japan

Katsuhisa Usami