Rohm Co., Ltd.

Katsuhisa Nagao

Yuki Nakano

Ryota Nakamura

Noriaki Kawamoto

Hidetoshi Abe

Keiji Okumura

Shuhei Mitani

Mineo Miura

A SiC semiconductor device is provided that is capable of improving the detection accuracy of the current value of a principal current detected by a current sensing portion by restraining heat from escaping from the current sensing portion to a wiring member joined to a sensing-side surface electrode. The semiconductor deviceincludes a SiC semiconductor substrate, a source portionincluding a principal-current-side unit cell, a current sensing portionincluding a sensing-side unit cell, a source-side surface electrodedisposed above the source portion, and a sensing-side surface electrodethat is disposed above the current sensing portionand that has a sensing-side padto which a sensing-side wire is joined, and, in the semiconductor device, the sensing-side unit cellis disposed so as to avoid being positioned directly under the sensing-side pad

SIC semiconductor device with current sensing capability

[Object] To provide a semiconductor device capable of improving a discharge starting voltage when measuring electric characteristics, and widening a pad area of a surface electrode or increasing the number of semiconductor devices (number of chips) to be obtained from one wafer, and a method for manufacturing the same. [Solution Means] A semiconductor deviceincludes an n-type SiC layerhaving a first surfaceA, a second surfaceB, and end facesC, a p-type voltage relaxing layerformed in the SiC layerso as to be exposed to the end portion of the first surfaceA of the SiC layer, an insulating layerformed on the SiC layerso as to cover the voltage relaxing layer, and an anode electrodethat is connected to the first surfaceA of the SiC layerthrough the insulating layerand has a pad areaselectively exposed.

Semiconductor device, and method for manufacturing semiconductor device

According to the present invention, a semiconductor device includes a first conductivity type SiC layer, an electrode that is selectively formed upon the SiC layer, and an insulator that is formed upon the SiC layer and that extends to a timing region that is set at an end part of the SiC layer. The insulator includes an electrode lower insulating film that is arranged below the electrode, and an organic insulating layer that is arranged so as to cover the electrode lower insulating film. The length (A) of the interval wherein the organic insulating layer contacts the SiC layer is 40 μm or more, and the lateral direction distance (B) along the electrode lower insulating layer between the electrode and SiC layer is 40 μm or more.

SiC semiconductor device with insulating film and organic insulating layer

A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

Semiconductor device

A semiconductor device () is manufactured which includes a SiC epitaxial layer (), a plurality of transistor cells () that are formed in the SiC epitaxial layer () and that are subjected to ON/OFF control by a predetermined control voltage, a gate electrode () that faces a channel region () of the transistor cells () in which a channel is formed when the semiconductor device () is in an ON state, a gate metal () that is exposed at the topmost surface for electrical connection with the outside and that is electrically connected to the gate electrode () while being physically separated from the gate electrode (), and a built-in resistor () that is made of polysilicon and that is disposed below the gate metal () so as to electrically connect the gate metal () and the gate electrode () together.

SiC semiconductor device with current sensing capability

According to the present invention, a semiconductor device includes a first conductivity type SiC layer, an electrode that is selectively formed upon the SiC layer, and an insulator that is formed upon the SiC layer and that extends to a timing region that is set at an end part of the SiC layer. The insulator includes an electrode lower insulating film that is arranged below the electrode, and an organic insulating layer that is arranged so as to cover the electrode lower insulating film. The length (A) of the interval wherein the organic insulating layer contacts the SiC layer is 40 &#x3bc;m or more, and the lateral direction distance (B) along the electrode lower insulating layer between the electrode and SiC layer is 40 &#x3bc;m or more.

Growing community of inventors

Kyoto, Japan

Katsuhisa Nagao