Shibaura Mechatronics Corporation

Shin-Etsu Engineering Co., Ltd.

Katsuhiro Yamazaki

Kensuke Demura

Yuki Saito

Nobuo Kobayashi

Kyouhei Tomioka

Yoshikazu Ohtani

Emi Matsui

Takeki Kogawa

Shunya Kubota

According to one embodiment, a substrate processing apparatus and a substrate processing method that can improve the quality of substrates are provided. The substrate processing apparatus according to one embodiment includes: a tableconfigured to support a processing target W including a substrate W, a ring Wsurrounding a surrounding of the substrate W, and a dicing tape Wadhered to a lower surface of the substrate Wand a lower surface of the ring W, and a liquid supplierconfigured to eject a liquid which does not mix with a processing liquid for processing the substrate Wand which has a specific gravity heavier than the processing liquid to one of an upper surface of the ring Wof the processing target W supported by the tablerotating by the rotation mechanism, an outer circumference end portion of the substrate Wof the processing target W supported by the tablerotating by the rotation mechanism, and between the substrate Wand the ring Wof the processing target W supported by the tablerotating by the rotation mechanism in accordance with a rotation number of the tableto supply the liquid between the substrate Wand the ring Wof the processing target W.

Substrate processing apparatus and substrate processing method

According to one embodiment, a substrate processing apparatus includes a tank that stores a treatment liquid; a liquid level pipe connected to the tank such that the treatment liquid stored in the tank flows therein, and configured such that the liquid level of the treatment liquid therein moves according to increase and decrease of the treatment liquid in the tank; a liquid level sensor that detects the liquid level in the liquid level pipe; an air supply pipe for supplying a gas to a piping space above the liquid level in the liquid level pipe; and a controller that determines whether there is erroneous detection of the liquid level sensor based on a detection result obtained by the liquid level sensor in response to the movement of the liquid level in the liquid level pipe caused by supply of the gas to the piping space from the air supply pipe.

According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

Method for manufacturing reflective mask and apparatus for manufacturing reflective mask

An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulatoris an inert gas to which Hhas been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.

Ashing method and ashing device

The present invention prevents drop in the function of a plasma processing device caused by reduction of a plasma generating chamber by reductive plasma that is generated from the introduced process gas, and extends the life of members which are in contact with reductive plasma, especially the plasma generating chamber member. The plasma processing device of this embodiment is a device for treating the surface of a processing subject S using radicals generated by exciting a process gas, wherein a plasma generating chamber member, having a internal plasma generating chamber, is connected to a gas introduction tubeattached to the outside of the process chamber, and a gas regulatoris provided on the end of the plasma generating chamber member. The configuration is such that when the plasma generating chamber memberis reduced by the reductive plasma generated from the gas introduced from the gas regulator, a reoxidation gas will be introduced into the plasma generating chamberin place of the reductive gas from the gas regulator

Growing community of inventors

Yokohama, Japan

Katsuhiro Yamazaki