Fujifilm Corporation

Katsuhiro Yamashita

Tomotaka Tsuchimura

Hidenori Takahashi

Toru Tsuchihashi

Hiroyuki Seki

Hideaki Tsubaki

Tadashi Inaba

Naoyuki Nishikawa

Yasutomo Kawanishi

Yoshinori Nishiwaki

Tomoo Kato

Kenji Takenouchi

Tomohiko Akatsuka

Mihoko Ishima

Yuusuke Kozawa

A radiation-sensitive composition including a compound (P) having a partial structure (A) having an ionic structural site and capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid and a partial structure (B) having at least one phenolic hydroxyl group, a part or all of hydrogen atoms of the hydroxyl group or groups each being protected by a group capable of leaving by the action of an acid, wherein the ionic structural site of the partial structure (A) contained in the compound (P) is a structure capable of generating an acid anion in the compound (P) upon irradiation with an actinic ray or radiation; a pattern-forming method using the same; and a resin which is used in the composition.

Photosensitive composition, pattern-forming method using the composition, and resin used in the composition

Provided is a actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin containing (A) a repeating unit having an ionic structure moiety that contains a cation represented by formula (Ia) and is capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation: wherein each of Rto Rindependently represents a hydrogen atom or a monovalent substituent and may combine together to form a ring, and Z represents a single bond or a divalent linking group.

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method using the same, and resin

A resin composition is provided that includes two or more types of compounds selected from the group consisting of (Component A) a compound comprising a silicon atom having a total of one or two alkoxy and hydroxy groups, (Component B) a compound comprising a silicon atom having a total of three alkoxy and hydroxy groups, and (Component C) a compound comprising a silicon atom having a total of four alkoxy and hydroxy groups. There are also provided a relief printing plate precursor that includes a relief-forming layer formed from the resin composition, a process for producing a relief printing plate precursor that includes a layer formation step of forming a relief-forming layer from the resin composition and a crosslinking step of thermally crosslinking the relief-forming layer so as to form a crosslinked relief-forming layer.

Resin composition for laser engraving, relief printing plate precursor for laser engraving and process for producing same, and process for making relief printing plate

A positive resist composition for use with electron beam, X-ray or EUV and a pattern forming method using the positive resist composition are provided, the positive resist composition including: (A) a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a basic compound; and (D) an organic solvent, wherein the entire solid content concentration in the resist composition is from 1.0 to 4.5 mass % and a ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solid content.

Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same

Provided is a positive resist composition for an electron beam, an X-ray or EUV, including: (A) a resin capable of decomposing by the action of an acid to increase the dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, represented by the following formula (ZI) or (ZII); (C) a basic compound; and (D) an organic solvent, wherein a concentration of all solid contents in said composition is from 1.0 to 4.5 mass %, and a total amount of the compound represented by formula (ZI) or (ZII) is 12 mass % or more based on all solid contents in said composition: wherein symbols in the formulae are defined in the specification.

Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same

A positive resist composition for electron beam, X-ray or EUV includes (A) a compound represented by the following formula (I), and (B) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developing solution, which includes a repeating unit represented by the following formula (II) and a repeating unit represented by the following formula (III): 

Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same

A metal-polishing liquid includes colloidal silica and a compound represented by Formula (I) or a compound represented by Formula (II). The colloidal silica is substituted by aluminum atoms at least one portion of the silicon atoms on the surfaces thereof. In Formula (I), Rrepresents an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; Rrepresents hydrogen atom, an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; m represents an integer from 0 to 6. In Formula (II), Rrepresents an alkyl group or aryl group; n represents an integer from 1 to 30.R&#x2014;OOC&#x2014;(CH)&#x2014;COO&#x2014;R&#x2003;&#x2003;Formula (I)R&#x2014;O&#x2014;(CHCHO)&#x2014;SOH&#x2003;&#x2003;Formula (II)

Metal-polishing liquid and chemical-mechanical polishing method using the same

A positive resist composition for electron beam, X-ray or EUV exposure, including (A) a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating a sulfonic acid upon irradiation with an actinic ray or radiation, wherein the resin (A) is a resin having a phenolic hydroxyl group and having a weight average molecular weight of 1,500 to 3,500, the positive resist composition has a property of decomposing by the action of an acid and causing the dissolution rate in an aqueous 2.38 wt % tetramethylammonium hydroxide solution at 23&#xb0; C. under normal pressure to increase in a range of 200 to 5,000 times, and the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.

Positive resist composition and pattern forming method using the same

A metal-polishing composition includes colloidal silica particles, which has a ratio of minor axis/major axis of 0.2 to 0.8 and a surface at least partially covered with aluminum atoms, comprises in an amount of 50% or more with respect to total abrasives. The metal-polishing composition preferably includes an oxidizing agent, an organic acid or the like. The colloidal silica constituting the colloidal silica particles is preferably formed by hydrolysis of alkoxysilane. The major axis of the colloidal silica particles is preferably in a range of 20 nm to 100 nm.

Metal-polishing composition and chemical-mechanical polishing method

The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.

Metal-polishing liquid and chemical mechanical polishing method using the same

A positive resist composition for electron beam, X-ray or EUV includes a compound having a proton acceptor functional group and capable of producing an acid radical upon irradiation with an actinic ray or radiation to reduce or lose the acceptor property or to change the proton acceptor functional group to be acidic, wherein the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.

A metal polishing composition comprising at least one of the compound represented by formula (1) defined herein and the compound represented by formula (2) defined herein, and an oxidizing agent, and a chemical mechanical polishing method comprising bringing the metal polishing composition into contact with a surface to be polished and providing a relative movement between the surface to be polished and a polishing surface.

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Shizuoka, Japan

Katsuhiro Yamashita