Matsushita Electric Industrial Co., Ltd.

Renesas Technology Corp.

Katsuhiro Ohtani

Tatsuya Kunikiyo

Hiroyuki Umimoto

Kyoji Yamashita

Katsumi Eikyu

Mutsumi Kobayashi

A CBCM measurement device includes a PMIS transistor, an NMIS transistor, a first reference conductor section connected to a first node, a second reference conductor section, with a dummy capacitor being formed between the first and second reference conductor sections, a first test conductor section connected to a second node, and a second test conductor section, with a test capacitor being formed between the first and second test conductor sections. The transistors are turned ON/OFF by using control voltages Vand V, and the capacitance of a target capacitor in the test capacitor is measured based on currents flowing through the first and second nodes. The capacitance measurement precision is improved by, for example, increasing a dummy capacitance.

Semiconductor device and capacitance measurement method

It is an object to obtain a semiconductor device having a circuit for CBCM (Charge Based Capacitance Measurement) which can measure a capacitance value with high precision. An MOS transistor constituting a circuit for CBCM has the following structure. More specifically, source-drain regions () and (') are selectively formed in a surface of a body region (), and extension regions () and (&#x2032;) are extended from tip portions of the source-drain regions () and (&#x2032;) opposed to each other, respectively. A gate insulating filmis formed between the source-drain regions () and (&#x2032;) including the extension regions () and (&#x2032;) and a gate electrode () is formed on the gate insulating film (). A region corresponding to a pocket region(&#x2032;) in a conventional structure having a higher impurity concentration than that of a channel region is not formed in a tip portion of the extension region(&#x2032;) and a peripheral portion of the extension region ().

Semiconductor device and method of checking semiconductor storage device

Growing community of inventors

Nara, Japan

Katsuhiro Ohtani