Hitachi, Ltd.

Hitachi Medical Corporation

Other

Nippon Telegraph and Telephone Public Corporation

Katsuhiro Kuroda

Hiroyuki Shinada

Hideo Todokoro

Atsuko Takafuji

Yusuke Yajima

Katsuya Sugiyama

Mari Nozoe

Yasutsugu Usami

Yutaka Kaneko

Tokuo Kure

Yasuhiro Mitsui

Ken Ninomiya

Aritoshi Sugimoto

Shunji Maeda

Maki Tanaka

Takashi Hiroi

Hitoshi Kubota

Haruo Yoda

Kimiaki Ando

Kazushi Yoshimura

Hiroshi Tooyama

Tadao Ino

Satoru Yamada

Tadashi Otaka

Fumio Mizuno

Hiroshi Kakibayashi

Kenji Takamoto

Kaoru Umemura

Hisaya Murakoshi

Masaki Hasegawa

Sadao Terakado

Hiroyasu Shichi

Kazutaka Tsuji

Shigeto Isakozawa

Mikio Ichihashi

Satoru Fukuhara

Tatsuo Makishima

Masanari Koguchi

Masatoshi Nishimura

Takashi Ohshima

Yoshio Takahashi

Fumio Murai

Shigeki Hirasawa

Kensuke Sekihara

Norio Saitou

Masakazu Sugaya

Ruriko Tsuneta

Takashi Nishida

Susumu Ozasa

Kuniyasu Nakamura

Masafumi Kanetomo

Tomoji Watanabe

Jun Motoike

Ichiro Miura

Tatuharu Yamamoto

Keiji Koyanagi

Yoshimi Sudo

Hiroyuki Suzuki

Hideo Saito

Makoto Saito

Hiroshi Suzuki

Kenichi Kawabata

Takashi Azuma

Takashi Inoue

Yoshihiro Shiroishi

Hitoshi Yokono

Shinichiro Umemura

Yoshibumi Matsuda

Kazuetsu Yoshida

Kazumasa Takagi

Ryuichi Shinomura

Masaki Ohura

Yuichi Miwa

Fumio Noda

Takeo Yamashita

Hideo Arima

Hidetaka Shigi

Sadao Hishiyama

Norikazu Tsumita

Jun Kubota

Tomoyuki Ohno

Sadanori Nagaike

Taisuke Matsushita

Koichi Koike

Genya Matsuoka

Kazunari Ishida

Tadashi Ohtaka

Kazuaki Sasaki

Yasushi Nakaizumi

Akira Fukuhara

Yasushi Kitazaki

Kazuaki Hiramatsu

Masakuni Okamoto

Makoto Konami

Hideo Tadokoro

Eisaku Oho

Masato Nakajima

Shingo Kimura

Hidetoshi Nisiyama

A circuit pattern inspection method and an apparatus therefore, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Method and apparatus for inspecting integrated circuit pattern

A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

A hydraulic pressure actuator having an inner tube and a mesh sleeve covering the outer periphery of the inner tube and longitudinally extendable by pressure fluid fed into the inner tube, wherein a low friction body formed in an elastic cylindrical body by knitting fine fibers in a circumferential direction without a seam is disposed between the inner tube and the mesh sleeve, and the low friction body contributes to an increase in the life of the hydraulic pressure actuator repeatedly performing extension/retraction motions. The hydraulic pressure actuator is used as an actuator for driving a CPM device which supports the extremity of a human body by ay least one of a plurality of members combined with each other and performs the rehabilitation of the joints of a handicapped by operating the member.

Hydraulic pressure actuator and continuous manual athletic device using the same

An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

Patterned wafer inspection method and apparatus therefor

To make possible the in-line inspection of a pattern of an insulating material. A patterned waferformed with a pattern by a resist film is placed on a specimen tableof a patterned wafer inspection apparatusin opposed relation to a SEM. An electron beamof a large current is emitted from an electron gunand the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detectorthereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unitand a defect determining unitSince an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.

A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with: the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.

Substrate temperature control system and method for controlling temperature of substrate

An ultrasound therapy apparatus delivers focused ultrasound for therapeutical purposes which can be correctly targeted to a target region, and also, a positional shift from the target region under irradiation of ultrasound can be effectively avoided. An ultrasound transducer is inside an applicator with an imaging ultrasonic probe. Another ultrasound transducer monitors a position of a target and a positional shift is inside a catheter which is inserted into a urethral tube. An imaging system drives the ultrasound probe to display an ultrasound tomographic image of a region in the vicinity of a target region. The ultrasound transducer is driven in a pulse-shaped mode at the same frequency as the imaging ultrasound and also at such timing when the imaging ultrasound is reached. As a result, a point-shaped sound source image is superimposed and displayed on an ultrasound tomographic image.

Ultrasonic medical treating device

In a pattern inspection device of the present invention having at least three electron-optical systems, detection signals approximately simultaneously obtained from identical circuit patterns are compared with each other. Further, areas around plural electron sources can be maintained at high degrees of vacuum by evacuating an electron gun chamber mounted with plural electron guns independently of a sample chamber. Further, electric fields and magnetic fields are confined in each electron-optical system by a shield electrode which makes it possible to evacuate an electron beam path to a high degree of vacuum, and at the same time, secondary electrons and reflected electrons are detected in the same electron-optical system by setting the samples to a negative voltage and accelerating secondary electrons and reflected electrons toward the electron source side in the direction of the electron beam axis. Thus, defect determination in pattern inspection is performable substantially simultaneously, and at the same time, the throughput of the inspections is improvable in proportion to the number of the electron-optical systems. Further, three or more electron sources are operable in a stable manner in high vacuum states, and signals from closely arranged electron-optical systems are detectable with high accuracy, and accurate inspections are performable.

Method and apparatus for inspecting integrated circuit pattern using a plurality of charged particle beams

To provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on its surface and acting to set the temperature of the substrate. A chuck mechanism is provided to fix the substrate in contact with a plurality of the projections by chucking the substrate toward the temperature control plate.

An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A cubic model is assumed, the cubic model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified cubic model.

Scanning electron microscope and method for dimension measuring by using

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Hachioji, Japan

Katsuhiro Kuroda