Sumitomo Electric Industries, Limited

Seiko Epson Corporation

Katsuhiro Itakura

Masuhiro Natsuhara

Satoshi Fujii

Hideaki Nakahata

Hirohiko Nakata

Akihiro Hachigo

Shinichi Shikata

Akira Mikumo

Koichi Kimura

Kenji Shinma

Shigenobu Sakita

Daisuke Shimao

Tomoyuki Awazu

Tomoki Uemura

Noboru Gotou

Toshiaki Saka

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

Wafer holding body

Wafer holding unit

The invention provides a wafer-prober wafer holder that allows positional precision and temperature uniformity to be increased, and also allows the chip to be heated and cooled rapidly, and a wafer prober device provided with the same. The wafer-prober wafer holder of the invention is constituted by a chuck top having a chuck top conducting layer on its surface, and a support member for supporting the chuck top, and has a cavity in a portion between the chuck top and the support member. The chuck top preferably is provided with a heating member.

Wafer holder for wafer prober and wafer prober equipped with the same

A wafer holder is provided having high rigidity and an enhanced heat-insulating effect that allow positional accuracy and heating uniformity to be improved, a chip to be rapidly heated and cooled, and the manufacturing cost to be reduced, and a wafer prober apparatus on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, a support member for supporting the chuck top, and a stand for supporting the support member. The chuck top has a thermal conductivity Kand a Young's modulus Y; the support member has a thermal conductivity Kand a Young's modulus Y; and the stand has a thermal conductivity Kand a Young's modulus Y. K&#x3e;Kand K&#x3e;K; and Y&#x3e;Yand Y&#x3e;Y

Wafer holder, and wafer prober provided therewith

A wafer holding body used for a wafer prober for testing a semiconductor wafer includes a chuck top having a conductive layer on a surface thereof and a support body supporting the chuck top. The support body has a base portion opposing the chuck top and a side portion extending from the perimeter of the base portion to the chuck top to support the chuck top. A cavity portion is formed between the chuck top and the base portion of the support body. A reflection plate is provided in the cavity portion. A heater unit and a wafer prober includes the wafer holding body.

Body for keeping a wafer, heater unit and wafer prober

According to the invention, there is provided a wafer holding member for use in a wafer prober for inspecting a semiconductor wafer, including a chuck top and a supporting member for supporting the chuck top, wherein the supporting member has a bottom portion facing to the chuck top, a cavity portion is formed between the chuck top and the bottom portion of the supporting member, and there is provided, in the cavity portion, at least a portion of a cooling mechanism for cooling at least one of the chuck top and the supporting member. Further, there is provided a wafer prober using the wafer holding member.

Body for keeping a wafer and wafer prober using the same

The present invention provides a surface acoustic wave device comprising a diamond, having operating frequencies in the range of several hundreds of MHz to several tens of GHz, and being capable of operating at high frequencies. The surface acoustic wave device of the present invention comprises a diamond layer or a substrate layer and a diamond layer, a ZnO piezoelectric layer, interdigital transducers and a short-circuit electrode layer, being characterized in that (2&#x3c0;&#xb7;H/&#x3bb;) is in the range of 3.0 to 10.0 where the thickness of the ZnO layer is H and the wavelength of the surface acoustic wave is &#x3bb;.

Saw device

A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves are formed on the chemically vapor-deposited diamond layer by laser processing using a laser such as a YAG, CO , or excimer laser each having a large output so that the grooves can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves are formed on the substrate by dicing such that the back-side grooves are in alignment with the front-side grooves . (4) The diamond wafer is divided into individual chips by applying mechanical stresses.

Method for separating chips from diamond wafer

A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer ; (b) a ZnO layer , with a thickness of tz, formed on the diamond layer ; (c) interdigital transducers (IDTs) , which excite and receive a SAW, formed on the ZnO layer ; and (d) an SiO layer , with a thickness of ts, formed on the ZnO layer so that the SiO layer can cover the IDTs . The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1&equals;3&middot;2&pgr;&middot;(tz/&lgr;) and kh2&equals;3&middot;2&pgr;&middot;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.

Surface acoustic wave element

A surface acoustic wave (SAW) device that is made with diamond, that has high efficiency, and that can be operated at high frequencies, particularly from 9.5 to 10.5 GHz. The SAW device comprises a diamond layer formed singly or formed on a substrate, a ZnO piezoelectric layer, interdigital transducers (IDTs), and a short-circuiting electrode as required. The SAW device has a structure in which the thickness of the ZnO layer, the wavelength of a harmonic of the SAW, and the line width of the IDTs fall in a specified range. With this structure, a large electromechanical coupling coefficient is obtained in a high-frequency range of 10 GHz band by utilizing the third or fifth harmonic of the SAW.

Surface acoustic wave device utilizing a ZnO layer and a diamond layer

A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1&equals;5&middot;2&pgr;&middot;(tz/&lgr;) and kh2&equals;5&middot;2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.

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Itami, Japan

Katsuhiro Itakura