Ngk Insulators, Inc.

Katsuhiro Inoue

Yuji Katsuda

Kenji Morimoto

Asumi Jindo

Shigeki Kato

Shinji Kawasaki

Takahiro Tomita

Masaaki Masuda

Yosuke Sato

Hiroaki Sakai

Yoshimasa Kobayashi

Kiyoshi Araki

Yoshinori Isoda

Yasufumi Aihara

Kiyoshi Matsushima

Tsuneaki Ohashi

Takuya Hiramatsu

Yoshio Suzuki

Takashi Kataigi

Hiroya Sugimoto

Kei Tanaka

Yuki Nomoto

Shingo Amano

Suguru Kodama

Masaaki Kawai

Asumi Nagai

Ken Kuwamoto

A method of manufacturing a composite sintered body includes a step (Step S) of molding mixed powder in which AlO, SiC, and MgO are mixed, into a green body having a predetermined shape and a step (Step S) of generating a composite sintered body by sintering the green body. Then, in Step S, the ratio of SiC to the mixed powder is not lower than 4.0 weight percentage and not higher than 13.0 weight percentage. Further, the purity of AlOin Step Sis not lower than 99.9%. It is thereby possible to suppress the abnormal grain growth of AlOand suitably manufacture a composite sintered body having high relative dielectric constant and withstand voltage, and low tan &#x3b4;.

Composite sintered body, semiconductor manufacturing apparatus member, and method of manufacturing composite sintered body

A cordierite-based sintered body according to the present invention contains cordierite as a main component and silicon nitride or silicon carbide. The cordierite-based sintered body preferably has a thermal expansion coefficient less than 2.4 ppm/&#xb0; C. at 40&#xb0; C. to 400&#xb0; C., an open porosity of 0.5% or less, and an average grain size of 1 &#x3bc;m or less.

Cordierite-based sintered body, method for producing the same, and composite substrate

A MgO-based ceramic film according to the present invention contains crystalline phases of MgO and MgAlO, and Al is dissolved in the MgO to form a solid-solution. The ceramic film exhibits a diffraction peak representing the (200) plane of MgO at an angle&#x3b8; of more than 42.92&#xb0; in CuK&#x3b1; XRD measurement. A shoulder preferably appears on the higher angle side of the peak representing the (200) plane of MgO. The mass ratio MgO/AlOof MgO to AlOconverted from Mg and Al in terms of oxides is preferably higher than 2.33.

MgO-based ceramic film, member for semiconductor manufacturing apparatus, and method for forming MgO-based ceramic film

A composite substrate includes a supporting substrate and a functional substrate that are directly joined together, the supporting substrate being a sintered sialon body.

Composite substrate, method for producing the same, and electronic device

A SiAlON sintered body according to the present invention is represented by SiAlON(0&#x3c;z&#x2264;4.2) and has an open porosity of 0.1% or less and a relative density of 99.9% or more. A ratio of a total of intensities of maximum peaks of components other than SiAlON to an intensity of a maximum peak of the SiAlON in an X-ray diffraction diagram is 0.005 or less.

Sialon sintered body, method for producing the same, composite substrate, and electronic device

A mullite-containing sintered body according to the present invention contains mullite and at least one selected from the group consisting of silicon nitride, silicon oxynitride, and sialon. It is preferable that the mullite-containing sintered body have a thermal expansion coefficient of less than 4.3 ppm/&#xb0; C. at 40&#xb0; C. to 400&#xb0; C., an open porosity of 0.5% or less, and an average grain size of 1.5 &#x3bc;m or less.

Mullite-containing sintered body, method for manufacturing the same, and composite substrate

The ceramic material of the present invention contains a crystalline phase of a complex oxide containing a Group II element M and a rare earth element RE. The Group II element M is Sr, Ca, or Ba. An XRD diagram of the ceramic material shows a first new peak between peaks derived from the (040) plane and the (320) plane of MREO. Such a ceramic material may be manufactured by, for example, preparing a material containing MREOor a material capable of reacting in thermal spray flame to produce MREOas a thermal spray material, and thermally spraying the thermal spray material onto a predetermined object.

Ceramic material, method for manufacturing the same, and semiconductor manufacturing apparatus member

A thermal spray coating according to the present invention contains mainly magnesium, aluminum, oxygen, and nitrogen and has, as a main phase, a crystal phase of a MgO&#x2014;AlN solid solution in which aluminum nitride is dissolved with magnesium oxide. The thermal spray coating is obtained by thermal spray of powder of a ceramic material containing mainly magnesium, aluminum, oxygen, and nitrogen and having, as a main phase, a crystal phase of a MgO&#x2014;AlN solid solution in which aluminum nitride is dissolved with magnesium oxide.

Thermal spray coating, member for semiconductor manufacturing equipment, feedstock material for thermal spray, and method for producing thermal spray coating

There is disclosed a silicon carbide porous material having a high thermal shock resistance. The silicon carbide porous material of the present invention includes silicon carbide particles, metal silicon and an oxide phase, and the silicon carbide particles are bonded to one another via at least one of the metal silicon and the oxide phase. Furthermore, the oxide phase includes a parent phase, and a dispersion phase dispersed in the parent phase and having a higher thermal expansion coefficient than the parent phase. Here, a lower limit value of a content ratio of the dispersion phase in the oxide phase is preferably 1 mass %, and upper limit value of the content ratio of the dispersion phase in the oxide phase is 40 mass %. Furthermore, it is preferable that the parent phase is cordierite and that the dispersion phase is mullite.

Silicon carbide porous material, honeycomb structure and electric heating-type catalyst carrier

A silicon carbide porous body according to the present invention contains silicon carbide particles, metallic silicon, and an oxide phase, in which the silicon carbide particles are bonded together via at least one of the metallic silicon and the oxide phase. The primary component of the oxide phase is cordierite, and the open porosity is 10% to 40%. Preferably, the silicon carbide porous body contains 50% to 80% by weight of silicon carbide, 15% to 40% by weight of metallic silicon, and 1% to 25% by weight of cordierite. Preferably, the volume resistivity is 1 to 80 &#x3a9;cm, and the thermal conductivity is 30 to 70 W/m&#xb7;K.

Silicon carbide porous body, honeycomb structure, and electric heating type catalyst carrier

A member for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al&#x2014;Si&#x2014;Mg or Al&#x2014;Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

Cooling plate, method for manufacturing the same, and member for semiconductor manufacturing apparatus

A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, TiSiC, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al&#x2014;Si&#x2014;Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40&#xb0; C. to 570&#xb0; C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.

Dense composite material, method for producing the same, and component for semiconductor production equipment

A dense composite material according to the present invention contains, in descending order of content, silicon carbide, titanium silicon carbide, and titanium carbide as three major constituents. The dense composite material contains 51% to 68% by mass of silicon carbide and no titanium silicide and has an open porosity of 1% or less. This dense composite material has properties such as an average linear thermal expansion coefficient of 5.4 to 6.0 ppm/K at 40&#xb0; C. to 570&#xb0; C., a thermal conductivity of 100 W/m&#xb7;K or more, and a four-point bending strength of 300 MPa or more.

Dense composite material, method for manufacturing the same, joined body, and member for semiconductor manufacturing apparatuses

A laminated structureincludes a first structurecontaining a main phase of magnesium-aluminum oxynitride, a second structurecontaining a main phase of aluminum nitride and grain boundary phases of a rare-earth aluminum composite oxide having a garnet-type crystal structure, and a reaction layerformed between the first structureand the second structure. The reaction layeris an aluminum nitride layer containing a smaller amount of grain boundary phasesof the rare-earth aluminum composite oxide than the second structure. The reaction layerof the laminated structurehas a thickness of 150 &#x3bc;m or less. The reaction layeris formed during the sintering by diffusing the grain boundary phasesinto the first structure

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Ama-gun, Japan

Katsuhiro Inoue