Rohm Co., Ltd.

Nidec Corporation

Katsuhiko Yoshihara

Masao Saito

Takukazu Otsuka

Maiko Hatano

Seita Iwahashi

Ryuta Watanabe

Masaru Ishii

Kouichi Kitaguro

Toru Takahashi

Masaki Yoshinaga

Masato Nakanishi

Takumi Okada

Yasuo Ishiyama

A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device having a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

Power module apparatus, cooling structure, and electric vehicle or hybrid electric vehicle

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.

Semiconductor device

A semiconductor device includes: a first wiring layer having a first main surface facing a thickness direction; a second wiring layer having a second main surface facing the same side as the first main surface and located away from the first wiring layer; a first semiconductor element having a first main surface electrode and bonded to the first main surface; a second semiconductor element having a second main surface electrode and bonded to the second main surface; a first terminal electrically connected to the second main surface electrode; a first conductive member bonded to the first main surface electrode and the second main surface; and a second conductive member bonded to the second main surface electrode and the first terminal, wherein the first terminal is located away from the first wiring layer in the thickness direction, and the second conductive member overlaps the first wiring layer in the thickness direction.

The power semiconductor apparatus includes: a semiconductor device; a bonding layer on chipdisposed on an upper surface of the semiconductor device; and a metal leaddisposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal leadhas a three-laminated structure including: a second metal layerhaving a CTE equal to or less than 5×10/° C., for example; and a first metal layerand a third metal layersandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

Power semiconductor apparatus and fabrication method for the same

Semiconductor device Aof the present disclosure includes: semiconductor element(semiconductor elementsA andB) having element obverse face and element reverse face facing toward opposite sides in z direction; support substratesupporting semiconductor element; conductive block(first blockand second block) bonded to element obverse face via first conductive bonding material (block bonding materialsand); and metal member (lead memberand input terminal) electrically connected to semiconductor elementvia conductive block. Conductive blockhas a thermal expansion coefficient smaller than that of metal member. Conductive blockand metal member are bonded to each other by a weld portion (weld portions Mand M) at which a portion of conductive blockand a portion of metal member are welded to each other. Thus, the thermal cycle resistance can be improved.

Semiconductor device with detection conductor

There is provided a semiconductor device including: a semiconductor element; a support substrate configured to support the semiconductor element; an intermediate metal layer interposed between the semiconductor element and the support substrate in a thickness direction of the support substrate, wherein the semiconductor element and the intermediate metal layer are bonded by solid phase diffusion bonding; and a first positioning portion including a portion of the semiconductor element and a first portion of the intermediate metal layer and configured to suppress relative movement between the semiconductor element and the intermediate metal layer.

The power semiconductor apparatus includes: a semiconductor device; a bonding layer on chipdisposed on an upper surface of the semiconductor device; and a metal leaddisposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal leadhas a three-laminated structure including: a second metal layerhaving a CTE equal to or less than 5&#xd7;10/&#xb0; C., for example; and a first metal layerand a third metal layersandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device comprising a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

The power module includes: a ceramics substrate; a source electrode pattern, a drain electrode pattern, a source signal electrode pattern, and a gate signal electrode pattern respectively disposed on the ceramics substrate; a semiconductor device disposed on the drain electrode pattern, the semiconductor device comprising a source pad electrode and a gate pad electrode at a front surface side; a divided leadframe for source bonded to the source electrode pattern and the source pad electrode; and a divided leadframe for gate pad electrode bonded to a gate pad electrode. There is provided a power module having a simplified structure, fabricated through a simplified process, and capable of conducting a large current; and a fabrication method for such a power module.

Power module and fabrication method for the same

The power module in which a plurality of switching elements connected in series between a first and second power terminals and a circuit configured to connect connecting points thereof to an output terminal are formed, the power module includes: a heat sink to which the switching elements are contacted; a package configured to seal a perimeter of the plurality of switching elements and a part of each terminal so as to expose at least one portion of the heat sink; and a protruding portion for thickness control configured to regulate a thickness of a thermally-conductive material when contacting the heat sink to the cooling apparatus facing the cooling apparatus via the thermally-conductive material, wherein each terminal is exposed from opposite side surfaces of the package, the opposite side surfaces having a height different from a height of an exposed surface of the cooling apparatus of the package.

Power module, thermal dissipation structure of the power module and contact method of the power module

A power module apparatus () comprises: a power module (A) comprising a package () configured to seal a perimeter of a semiconductor device, and a heat radiator () bonded to one surface of the package; a cooling device () comprising a coolant passage () through which coolant water flows, in which the heat radiator is attached to an opening () provided on a way of the coolant passage, wherein the heat radiator () of the power module (A) is attached to the opening () of the cooling device () so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

A circuit element includes an upper switching device, a lower switching device, an upper diode device, and a lower diode device. An upper drain is connected to a first terminal connected to a positive electrode of a power supply, and an upper source is connected to a third terminal. A lower drain is connected to a fourth terminal, and a lower source is connected to a second terminal connected to a negative electrode of the power supply. An upper anode is connected to the fourth terminal, and an upper cathode is connected to the first terminal. A lower anode is connected to the second terminal, and a lower cathode is connected to the third terminal. The third terminal and the fourth terminal are arranged so as to be able to be short-circuited outside of a package.

Growing community of inventors

Kyoto, Japan

Katsuhiko Yoshihara