Hitachi, Ltd.

Katsuhiko Yamaguchi

Shigeo Moriyama

Yoshio Homma

Kan Yasui

Sunao Matsubara

Yoshihiro Ishida

Ryousei Kawa-ai

Harukazu Miyamoto

Takeshi Maeda

Motoyasu Terao

Kyoko Kojima

Yuko Tsuchiya

Soichi Katagiri

Tadao Ino

An information recording method and information recording apparatus is capable of resolving the trade-off relation between recording density and transmittance, wherein either the reproduction (playback) signal quality or the recording sensitivity is lowered. For this purpose, a voltage is applied by way of ball bearings or slip rings to a specified layer of a medium having multiple layers. The light transmittance of the recording layer is changed by application of this voltage. The tradeoff relationship between recording density and transmittance is eliminated thereby, and the recording density and transmittance levels are both improved, so as to enhance the recording reliability.

Information recording method and information recording apparatus

A method for processing semiconductor wafers, which provides planarized surface in a well controllable manner and with high accuracy by processing a film with uneven surface, formed over a semiconductor wafer, within the area of a working surface with a diameter larger than that of said semiconductor wafer by not more than two times, and by processing the film with a polishing liquid supplied from a supply unit disposed on a vertically arranged working surface is disclosed. Additionally, high quality dressing of the working surface can be easily performed by virtue of the smaller diameter of the working surface. Furthermore, the vertical arrangement of the working surface makes possible ready compatibility with semiconductor wafers of enlarged diameters.

Apparatus for processing semiconductor wafers

The present invention relates to a polishing method using a grindstone comprising abrasive grains and a bonding resin for bonding the abrasive grains, as well as to a polishing apparatus to be used for the polishing method. By using a resin for bonding abrasive grains, it is possible to obtain a grindstone having a desired modulus of elasticity. With such a grindstone, the surface of a substrate having concave and convex portions can be rendered uniformly flat, irrespective of the size of the concave and convex portions. Further, by first polishing the substrate surface with a polishing tool of a small elastic modulus and thereafter polishing it with a polishing tool of a large elastic modulus, it is possible to obtain a polished surface of reduced damage. The method of the invention is effective in planarizing various substrate surfaces having concave and convex portions.

Polishing method and apparatus

Method for working semiconductor wafer

In the polishing machine 10 for pressing the polished surface 7 of the workpiece 1 against the face where there are abrasives 15 of the rotating polishing tool 11 and executing chemical mechanical polishing, the brushing device 30, the cleaner 40, the abrasive supplier 52, and the pure water supplier 60 are sequentially arranged behind the location of the head 20 for pressing the workpiece 1 against the polishing tool 11 in the rotational direction. The cleaner 40 sprays the cleaning water 47 to the face where there are abrasives 15 of the rotating polishing tool 11 and sucks and collects it by the vacuum hole 45. Fresh slurry 62 is always supplied by the slurry supplier 63 comprising the abrasive supplier 52 and the pure water supplier 60.

Polishing method for semiconductors and apparatus therefor

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Hachioji, Japan

Katsuhiko Yamaguchi