Canon Kabushiki Kaisha

Nsk Corporation

Fuji Photo Film Company, Limited

Nippon Seiko Kabushiki Kaisha

Nec Corporation

Elpida Memory, Inc.

Ps4 Luxco S.a.r.l.

Tokyo Electric Power Company Holdings, Inc.

Fujitsu Component Limited

Tokyo Institute of Technology

Nec C Orporation

Katsuhiko Tanaka

Ikunori Sakatani

Hiromitsu Muraki

Hiroshi Fukumoto

Kazuyoshi Hagiwara

Kiyoshi Takeuchi

Shigeru Endo

Shoji Noguchi

Kazuhiro Uemura

Eiichi Imai

Chuichi Sato

Takeyuki Yoshiba

Takanobu Sato

Rika Doi

Takeshi Ikeda

Masanori Takenouchi

Hiroshi Nakajima

Koichi Takeda

Masahiro Nomura

Motoo Urawa

Hitoshi Wakabayashi

Fumio Mogi

Takayuki Nagatsuka

Risho Koh

Junichi Tsuji

Toru Takamizawa

Masayasu Tanaka

Koichi Terashima

Koshi Suematsu

Hiromitsu Asai

Shigeharu Yamagami

Atsushi Yago

Keisuke Kimura

Koichi Takahashi

Satoshi Sakurai

Hirohide Tanikawa

Tsutomu Kukimoto

Tsuyoshi Takiguchi

Yukihiko Shimizu

Masaki Uchiyama

Yasuo Mitsuhashi

Sumio Yoshikawa

Yoshihiko Hyosu

Masahiko Katayama

Norio Hikake

Yutaka Ueno

Yoji Kawagishi

Keisuke Tsukada

Rikio Shiba

Naoto Kitamori

Hiromi Sugi

Tomoyoshi Hyodo

Tetsuji Aoyagi

Shuichi Umezawa

Gentei Inoue

Hideo Okano

Koichi Kawakami

Hiroshige Kikura

Isao Nakayama

Nobuyoshi Tsuzuki

Hideki Okatani

Takeshi Yajima

Etsuo Maeda

Makoto Saotome

Yukio Higuchi

Kiyoshi Haginuma

Ikunori Kawakami

Michihiro Kuramochi

Tsuyoshi Takigushi

Masaru Tamaki

Akira Hanafusa

Takenobu Otsubo

Masayuki Ochiai

Shoji Moguchi

Masaki Yokosaka

Ryoji Miyauchi

Tatsuya Kawaguchi

Toshimi Takajou

A space temperature scanner capable of measuring a temperature distribution in a space without requiring troublesome device installation work or complex data processing is disclosed. The space temperature scanner (scanner) of the present invention includes a bar-shaped portable support member, attachment unitsarranged along a straight line on the support member, and thermocouple unitsthat can be removably attached to the attachment units. The thermocouple unitscan be selectively attached to some or all of the attachment unitswhen temperature measurement is to be performed.

Space temperature scanner and method for displaying space temperature

A touch panel device including: a first substrate having a first surface and a second surface arranged on an opposite side of the first surface; a second substrate having a third surface facing the first surface of the first substrate via a space; a first transparent conductive film formed on the first surface; a second transparent conductive film formed on the third surface; an adhesive layer formed between the first transparent conductive film and the second transparent conductive film; and a decorative film that is fixed on the second surface, and includes a switch unit that projects in a direction from second substrate toward the first substrate.

Structure to avoid gaps between switches/touch panel and case of a touch panel device

A flow rate measurement device is configured to measure a flow rate of a gas flowing inside of a pipeline, and includes an ultrasonic transducer installed so as to be in contact with the pipeline, and a flow rate calculation part configured to calculate the flow rate of the gas according to a result of reception of ultrasonic wave from the ultrasonic transducer, wherein the ultrasonic transducer includes an ultrasonic oscillation part configured to emit the ultrasonic wave toward the inside of the pipeline and an ultrasonic reception part configured to receive the ultrasonic wave, and at least the ultrasonic oscillation part has a focusing part configured to focus the ultrasonic wave on a center of the pipeline.

Flow rate measurement device and flow rate measurement method

In a manufacturing method of a barrier layer, a via hole is formed in an insulating layer that covers a conductive layer over a substrate, and then the barrier layer is formed in the via hole. The barrier layer is provided by forming a second titanium nitride film after forming a first titanium nitride film. The second titanium nitride film is formed using a method having a weak anisotropy than the first titanium nitride film.

Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device comprises forming a contact hole within an interlayer insulating film of a substrate and forming a contact plug while the substrate is heated. In forming the contact plug, the substrate is held on a stage within the chamber of a sputtering apparatus through a chuck, and an ESC voltage applied to the chuck is increased stepwise in a plurality of steps. First target power is applied to a target within the chamber to form a first Al film in the contact hole. Next, second target power higher than the first target power is applied to the target within the chamber to form a second Al film on the first Al film.

Method of manufacturing semiconductor device

A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode including an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion includes an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer.

Manufacturing process of fin-type field effect transistor and semiconductor

A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode comprising an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion comprises an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer.

Fin-type field effect transistor and semiconductor device

A semiconductor device having SRAM cell units each comprising a pair of a first driving transistor and a second driving transistor, a pair of a first load transistor and a second load transistor, and a pair of a first access transistor and a second access transistor, wherein each of the transistors comprises a semiconductor layer projecting upward from a substrate plane, a gate electrode extending on opposite sides of the semiconductor layer so as to stride over a top of the semiconductor layer, a gate insulating film interposed between the gate electrode and the semiconductor layer, and a pair of source/drain areas formed in the semiconductor layer; and the first and second driving transistors each have a channel width larger than that of at least either each of the load transistors or each of the access transistors.

The present invention relates to a semiconductor device including a Fin type field effect transistor (FET) having a protrusive semiconductor layer protruding from a substrate plane, a gate electrode formed so as to straddle the protrusive semiconductor layer, a gate insulating film between the gate electrode and the protrusive semiconductor layer, and source and drain regions provided in the protrusive semiconductor layer, wherein the semiconductor device has on a semiconductor substrate an element forming region having a Fin type FET, a trench provided on the semiconductor substrate for separating the element forming region from another element forming region, and an element isolation insulating film in the trench; the element forming region has a shallow substrate flat surface formed by digging to a depth shallower than the bottom surface of the trench and deeper than the upper surface of the semiconductor substrate, a semiconductor raised portion protruding from the substrate flat surface and formed of a part of the semiconductor substrate, and an insulating film on the shallow substrate flat surface; and the protrusive semiconductor layer of the Fin type FET is formed of a portion protruding from the insulating film of the semiconductor raised portion.

Semiconductor device with fin-type field effect transistor and manufacturing method thereof.

Contents are distributed on the basis of information of a hobby and an address of the user and the like. The distribution of the contents is controlled also on the basis of a result of comparison of a reception intensity regarding contents of 3 or more levels set on the user side and a distribution intensity set as attributes into the contents on a distributing side.

Contents distributing server, contents distribution control method, program, and recording medium

A method of manufacturing a semiconductor device is achieved by forming an interlayer insulating film on a conductive portion formed in a semiconductor substrate which is placed in a chamber. A contact hole is formed to pass through the interlayer insulating film to the conductive portion, and a barrier metal layer is formed to cover a bottom portion of side wall portion of the contact hole. A tungsten layer is formed from a material gas containing fluorine and the fluorine is removed from the tungsten layer through a post purge process. The tungsten layer is formed to fill the contact hole in which the barrier metal layer has been formed.

A submerged processing device for a photosensitive material disposed at a partitioning wall which is provided within a processing tank main body and which is between processing chambers respectively storing a processing liquid, the submerged processing device includes: a housing at an interior of which is formed a processing space where the processing liquid is stored; a conveying path for conveying-in of the photosensitive material and which is formed in the housing so as to communicate with an interior of the processing space; a path for conveying-out of the photosensitive material and which is formed in the housing so as to communicate with the interior of the processing space; a processing liquid passage preventing mechanism disposed at the photosensitive material conveying path such that only the photosensitive material passes therethrough; and a processing liquid changing mechanism provided at the housing, for changing the processing liquid stored in the processing space.

Submerged processing device for photosensitive material

A fluid bearing device achieves superior in wear start-stop resistance and in manufacturing ability. The fluid bearing device includes a shaft having a flange portion, a sleeve opposing to the shaft across a fluid bearing clearance of a radial fluid bearing, a counterpart member opposing to at least one of plane of the flange portion across a fluid bearing clearance of a thrust bearing. The flange portion and the sleeve portion being formed of copper alloy of mutually difference composition.

Fluid bearing device

A photosensitive material processing apparatus according to the present invention includes a tank that has a body charged with a solution that processes the photosensitive material, the apparatus comprising a filter for purifying the processing solution, and a conduit for circulating the processing solution from a lower region of the tank body to an upper region of the tank body. Further, a pleated cartridge filter for use in a photosensitive material processing comprises a cylindrical pleated filter body formed by folding a filtering sheet member; and a blocking member, including a hole that communicates between an interior of the filter body and the outside, for blocking at least one end of the filter body, wherein a portion of the blocking member contacting the fitting portion is compressed when the blocking member is fitted to the fitting portion to closely contact the same.

Photosensitive material processing apparatus and pleated cartridge filter

Growing community of inventors

Kanagawa, Japan

Katsuhiko Tanaka