Hitachi, Ltd.

Katsuhiko Shiota

Tadahiko Miyoshi

Shigeoki Nishimura

Manabu Madokoro

Tetsuo Oyama

Kiyoshi Otaka

Hisamitsu Hatoh

Shinichi Fukada

Jun Sugiura

Kunio Miyazaki

Jin Onuki

Yasushi Koubuchi

Takao Funamoto

Masayasu Nihei

Satoshi Kokura

Takashi Haramaki

Tatsuo Itagaki

Akira Tomita

Motoo Suwa

A highly reliable sodium-sulfur battery includes a cell container for the positive electrode which is hardly deteriorated by corrosion. The cell container for the positive electrode is assembled by integrating plural members made of a high corrosion resistant alloy containing Cr, or a Co base alloy containing Cr, Ni and Mo, wherein carbide containing at least one of Cr, W and Mo is precipitated, and a readily deformable portion is provided to the cell container for the positive electrode, whereby reliability of the sodium-sulfur battery can be significantly improved.

Sodium-sulfur battery, and a battery system using same

A highly reliable sodium-sulfur battery includes a cell container for the positive electrode which is hardly deteriorated by corrosion. The cell container for the positive electrode is made of a Co base alloy containing Cr, Ni, and Mo, wherein carbide containing at least one of Cr, W, and Mo is precipitated, or the cell container for positive electrode is assembled by integrating plural members made of a high corrosion resistance alloy containing Cr by welding, and a readily deformable portion is provided to the cell container for positive electrode, whereby the reliability of the sodium-sulfur battery can be significantly improved.

A semiconductor device having a high reliability wiring conductor structure applicable to DRAMs and SRAMs. The semiconductor device of the present invention is characterized by comprising a first wiring conductor film wherein a specific resistance is 5.about.15.mu..OMEGA.cm and an allowable current density is 1.times.10.sup.6 .about.1.times.10.sup.8 A/cm.sup.2 ; a second wiring conductor film having a laminated layer structure formed of a layer of high fusing point and low resistance material and a layer of an Al based alloy; and a plug composed of a high fusing point and low resistance material, electrically connecting to the first wiring conductor film and the second wiring conductor film. Thus, a semiconductor device showing almost no increase in electrical resistance in a wiring conductor film due to electromigration even after subjecting to a large current is provided.

Semiconductor device and method for manufacturing the same

A heat exchanger and a method of manufacturing a heat exchanger by brazing metal members mainly made of Al or Al alloy is disclosed. The heat exchanger has a plurality of brazed metal members, at least one of the brazed metal members being made of brazing sheet clad with a brazing material. The brazed portions of the metal members or the whole surface of the heat exchanger are coated with a corrosion-resistant fluoride flux consisting essentially of 25-40% KF, 38-54% AlF3 and 3-30% ZnF2 by weight which forms a corrosion-inhibiting metallic film.

Method of brazing an aluminum heat exchanger

Growing community of inventors

Tokai-mura, Japan

Katsuhiko Shiota