Sharp Kabushiki Kaisha Corporation

Katsuhiko Nomoto

Katsushi Kishimoto

Yasushi Fujioka

Hitoshi Sannomiya

Yusuke Fukuoka

Akira Shimizu

Osamu Sakai

Takashi Tomita

Yoshihiro Yamamoto

Yuhsuke Fukuoka

Hiroyuki Fukuda

Sae Takagi

Takanori Nakano

A semiconductor device manufacturing unit is provided, wherein a cathode and an anode can be placed in a simple structure; wherein excellent film deposition and film thickness distribution can be gained; and wherein no cooling devices are required to be provided. A chamberis formed so that the inside thereof can be controlled at a vacuum of an arbitrary degree. Anode supportsfor supporting an anodeare placed at the bottom of the internal structure. The anodeis made of a material having a high electrical conductivity and a high heat resistance. The temperature of the anodeis controlled by a heaterso as to be in a range of from room temperature to 600&#xb0; C. A cathodeis placed on a cathode supportso as to face the anode. The cathode supportis attached to an internal structuremade of a frame in a rectangular prism form provided within the chamber

Semiconductor device manufacturing unit and semiconductor device manufacturing method

A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.

Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same

A thin film formation apparatus for forming a thin film on a substrate is provided, which comprises: a reaction chamber; a gas introduction section for introducing a reactant gas into the reaction chamber; an evacuation section for exhausting the reactant gas from the reaction chamber; first and second planar electrodes provided in the reaction chamber; first and second support members which respectively support the first and second electrodes in parallel relation; a high frequency power source for applying high frequency power between the first and second electrodes; and a heating section for heating one of the first and second electrodes; wherein the substrate is placed on the heated electrode, and at least one of the first and second electrodes is supported movably in the direction of thermal expansion by the corresponding support member. With this arrangement, the variation in the spacing between the first electrode (anode electrode) and the second electrode (cathode electrode) can be reduced when the first and second electrodes are heated.

Thin film formation apparatus including engagement members for support during thermal expansion

An electronic device manufacturing apparatus includes: a reaction chamber including a wall having a ground potential level; a reaction gas inlet for introducing a reaction gas into the reaction chamber; a high frequency power generator for generating a high frequency voltage for exciting the reaction gas into plasma state or dissociated state; a cathode electrode connected to the high frequency power generator; and a floating capacitance formed between a potential level of the cathode electrode and the ground potential level. An impedance adjusting capacitor is inserted so as to be in series with the floating capacitance. The impedance adjusting capacitor has a capacitance value less than that of the floating capacitance.

Electronic device manufacturing apparatus and method for manufacturing electronic device

An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.

Silicon-based thin-film photoelectric conversion device and method of manufacturing thereof

A photovoltaic device have a pin junction of a p-layer, an i-layer and an n-layer, wherein the p-layer includes a first p-layer and a second p-layer thereover, the first p-layer having a thickness of 5 nm or less and being uniformly doped with a p-type impurity, and the second p-layer being formed by decomposition of a gas which does not positively incorporate a p-type impurity.

Photovoltaic device and process for producing the same

Electronic device manufacturing apparatus and method for manufacturing

A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.

Growing community of inventors

Kashiwara, Japan

Katsuhiko Nomoto