Nippon Electric Co., Ltd.

Nec Corporation

Katsuhiko Nishida

Masayasu Ueno

Isamu Sakuma

Hideo Kawano

Hiroo Yonezu

Yoshishige Matsumoto

Izuo Hayashi

Yasuo Nannichi

Tonao Yuasa

Takao Furuse

Taibun Kamejima

Toshio Uji

A semiconductor photodiode comprising an N+ InP substrate 6, a similar InP substrate layer 7, an N- InGaAs layer 8, a thin N-type InP layer 9, an N- InP layer 10 and a P+ InP region 11 forming the top of the photodiode. When reversed biased, the high electric field at the hetero-junction between the N- InGaAs and the N-type InP cause holes to tunnel through the band-gap difference barrier thereby eliminating slow trapping states at the hetero-interface.

Photodiode having heterojunction

A semiconductor laser of the rib guide type having the thickness of an active layer within a stripe-shaped region thicker than that of the outside, and thus the stripe-shaped region is made to have a waveguide action and, thereby, fundamental mode laser may be achieved.

Semiconductor laser

A semiconductor laser device in which at least one of the main surfaces of a semiconductor laser crystal body which generates heat during operation is brought into thermal contact with a silicon crystal heat-sink body.

Semiconductor laser device equipped with a silicon heat sink

Growing community of inventors

Tokyo, Japan

Katsuhiko Nishida