Shin-etsu Handotai Co., Ltd.

Shin-etsu Handotai, Ltd.

Katsuhiko Miki

Masaro Tamatsuka

Akihiro Kimura

Izumi Fusegawa

Makoto Iida

Hiroshi Takeno

Ken Aihara

Yoshinori Hayamizu

Suguru Matsumoto

Yukio Naruke

Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.

Quartz glass crucible, method for producing the same, and method for producing silicon single crystal

A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal wafer, which allows easy oxygen precipitation and exhibits high gettering ability in spite of its suppressed oxygen concentration, and an epitaxial silicon wafer in which an epitaxial layer grown by using the aforementioned wafer as a substrate wafer has an extremely low heavy metal impurity concentration are produced with high productivity and supplied. The present invention relates to a boron-doped silicon single crystal wafer having a resistivity of from 10 m&OHgr;&middot;cm to 100 m&OHgr;&middot;cm, an antimony-doped silicon single crystal wafer, or a phosphorus-doped silicon single crystal wafer, which are produced by slicing a silicon single crystal ingot grown by the Czochralski method with nitrogen doping. The present invention also relates to an epitaxial wafer, wherein an epitaxial layer is formed on a surface of the aforementioned wafers. The present invention further relates to method for producing them.

Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them

There is disclosed a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, wherein a size of grown-in defects in the silicon single crystal wafer is 70 nm or less, a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, the silicon single crystal ingot is grown with controlling a rate of cooling from 1150 to 1080&deg; C. to be 2.3&deg; C./min or more, and a method for producing a silicon single crystal wafer wherein a silicon single crystal ingot is grown with doping nitrogen and controlling a rate of cooling from 1150 to 1080&deg; C. to be 2.3&deg; C./min or more, and is then processed to provide a silicon single crystal wafer. The silicon single crystal wafer for device wherein growth of the crystal defects is suppressed can be produced by CZ method in high productivity.

Silicon single crystal wafer and method for producing silicon single crystal wafer

There are disclosed a method for producing a silicon single crystal wafer for particle monitoring, which comprises growing a silicon single crystal ingot doped with nitrogen by the Czochralski method, and processing the single crystal ingot into wafers to produce the silicon single crystal wafer for particle monitoring; and a silicon single crystal wafer for particle monitoring, which is a silicon single crystal wafer for particle monitoring obtained by processing a silicon single crystal ingot into wafers, which ingot has been produced by the Czochralski method while doped with nitrogen. The method of the present invention can produce silicon single crystal wafers for particle monitoring having few pits on wafer surfaces with high productivity.

Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoring

A method of controlling a misfit dislocation in a process of producing an epitaxial semiconductor wafer comprising a semiconductor substrate and an epitaxial layer deposited on the semiconductor substrate, an impurity concentration of the epitaxial layer differing from that of the semiconductor substrate, has the step of controlling the amount of an extrinsic strain caused on the back surface of the semiconductor substrate prior to the step of depositing the epitaxial layer, thereby controlling an occurrence of misfit dislocation caused in and near the interface between the semiconductor substrate and the epitaxial layer.

Method of controlling misfit dislocation

A method of measuring pattern shift on a diffused semiconductor wafer after an epitaxial process including measuring a ratio between the line width of a linear pattern vertical to an orientation flat and line width of a linear pattern parallel to the orientation flat and estimating the shift between these patterns.

Pattern shift measuring method

A method is disclosed for evaluation of the transition region of a silicon epitaxial wafer comprising obtaining the waveform of an interferogram signal for reflected light by irradiation the silicon epitaxial wafer with infrared radiation followed by measurement of the intensity of the light of the interference fringe employing a Michelson interferometer and obtaining the extent of the transition region of the silicon epitaxial wafer by measuring the distance between the maximum peak of the waveform in the side burst region in the interferogram signal and the peak adjacent to said maximum peak of the waveform in the side burst region in the interferogram signal and the distance between the maximum peak and the bottom first coming after said maximum peak of the waveform in the side burst region in the interferogram signal, or the difference in height between the maximum peak and the bottom first coming after said maximum peak of the waveform in the side burst region in the interferogram signal.

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Nishishirakawa-gun, Japan

Katsuhiko Miki