Nippondenso Co., Ltd.

Kabushiki Kaisha Toyota Chuo Kenkyusho

Katsuhiko Ariga

Kenichi Ao

Yasunori Taga

Tadashi Ozaki

Yoshimi Yoshino

Hideya Yamadera

Ichiro Izawa

Yoshiki Seno

Toshikazu Arasuna

Haruhiko Inoue

Hiroaki Nishimura

Hideo Hattori

Toshikazu Matsushita

Naoki Hara

A gas detecting device for a vehicle includes a casing which is formed therein with an air passage having an air inlet and an air outlet located above the air inlet. A filter is provided in the air passage below and downstream of a gas sensor. The filter has a lower end surface at a side of the air inlet and an upper end surface at a side of the gas sensor. The lower end surface of the filter works as an air-passing surface through which the air flows into the filter, while the upper end surface of the filter works as an air-passing surface through which the air flows out of the filter. A certain gap is provided between a lower portion of a side surface of the filter and an inner wall surface of the casing defining the air passage so that this lower portion of the filter also works as an air-passing surface through which the air flows into the filter. A labyrinth structure may be provided in the air passage between the air inlet and the filter for causing the air to meander at the labyrinth structure. Further, it may be arranged that the air passage has an opening area which is the greatest at the air inlet and then is gradually reduced as advancing toward the labyrinth structure.

Gas detecting device for vehicle

A thin film resistor for a strain gauge prepared by physical or chemical vapor deposition. The resistor contains 60 to 98 atomic % of chromium, 2 to 30 atomic % of oxygen, and 0 to 10 atomic % of a metal or semiconductor. These constituents are uniformly distributed. The thickness of the film is between 0.01 and 10 .mu.m. The metal is at least one of Al, Ti, Ta, Zr and In, and the semiconductor is at least one of silicon, germanium and boron. The thin film resistor has excellent resistance-strain characteristics and resistance-temperature characteristics, as well as high sensitivity and mechanical strength.

Thin film resistor for strain gauge

A potentiometer includes a magnetoresistive element made of ferromagnetic material. A device applies a magnetic field to the magnetoresistive element. An absolute value of the magnetic field applied to the magnetoresistive element is equal to or greater than a saturation magnetic field with respect to the ferromagnetic magnetoresistive element. The magnetic field applying device is movable relative to the magnetoresistive element.

Noncontact potentiometer

Growing community of inventors

Aichi, Japan

Katsuhiko Ariga