Toyoda Gosei Co., Ltd.

Other

Nagoya University

Kabushiki Kaisha Toyota Chuo Kenkyusho

Pioneer Electronic Corporation

Research Development Corporation of Japan

Toyoda Gosei Kabushiki Kaisha

Toyoda Gosei Kabushiki-kaisha (toyoda Synthetics Co., Ltd.)

Japan Science and Technology Agency

Research Development Corporation

Kabushiki Kaisha Suzutora

Katsuhide Manabe

Hisaki Kato

Michinari Sassa

Shiro Yamazaki

Isamu Akasaki

Norikatsu Koide

Masafumi Hashimoto

Akira Mabuchi

Masayoshi Koike

Naoki Shibata

Makoto Asai

Hiroshi Amano

Kazumasa Hiramatsu

Masahiro Kotaki

Masatoshi Tsutsui

Nobuo Okazaki

Tetsuya Takeuchi

Yasuhiko Ogisu

Atsushi Watanabe

Masayuki Suzuki

Jiro Masumi

Tomotada Tochitani

Kenzo Shinoda

Shinya Asami

Toshiyasu Ito

Makoto Tamaki

Toshiyuki Tanaka

Teruo Tohma

Toshikazu Suzuki

Ryoichi Muroi

Yutaka Sato

Hisao Toya

Kazuaki Goto

Yoshifumi Nishibayashi

Toshimasa Suzuki

Masafumi Hasimoto

Isamu Akazaki

Eigo Nakajima

Masaki Mori

A light-emitting semiconductor device () consecutively includes a sapphire substrate (), an AlN buffer layer (), a silicon (Si) doped GaN n-layer () of high carrier (n-type) concentration, a Si-doped (AlGa)InN n-layer () of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (AlGa)InN emission layer (), and a Mg-doped (AlGa)InN p-layer (). The AlN layer () has a 500 &#x212b; thickness. The GaN n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The emission layer () has about a 0.5 &#x3bc;m thickness. The p-layerhas about a 1.0 &#x3bc;m thickness and a 2&#xd7;10/cmhole concentration. Nickel electrodes () are connected to the p-layer () and n-layer (), respectively. A groove () electrically insulates the electrodes (). The composition ratio of Al, Ga, and In in each of the layers () is selected to meet the lattice constant of GaN in the n-layer (). The LED () is designed to improve luminous intensity and to obtain purer blue color.

Light-emitting semiconductor device using group III nitrogen compound

A fiber sheet composed of knitted, woven, or non-woven fiber, which is resistant against contamination, and such contamination is easily washed off, and is durable, and suitable for use as materials to make curtains, tapestries, screens, flags, wallpaper, and sliding screen door (fusuma), for both indoor and outdoor environments. The fiber sheet is coated on its both sides of the fiber by ceramics composed of oxidized, nitrogenous, or carbonized forms of metals such as tin, titanium, aluminum, and other metals, forming a thin contamination resistant coating. Typically, the contamination resistant coating comprises SiOor SnOor a combination/mixture of the two substances, and such coating is hard and is superior in protection against contamination.

Contamination resistant fiber sheet

A light-emitting semiconductor device () consecutively includes a sapphire substrate (), an AlN buffer layer (), a silicon (Si) doped GaN n-layer () of high carrier (n-type) concentration, a Si-doped (AlGa)InN n-layer () of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (AlGa)InN emission layer (), and a Mg-doped (AlGa)InN p-layer (). The AlN layer () has a 500 &#x212b; thickness. The GaN n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The emission layer () has about a 0.5 &#x3bc;m thickness. The p-layer 6 has about a 1.0 &#x3bc;m thickness and a 2&#xd7;10/cmhole concentration. Nickel electrodes () are connected to the p-layer () and n-layer (), respectively. A groove () electrically insulates the electrodes (). The composition ratio of Al, Ga, and In in each of the layers () is selected to meet the lattice constant of GaN in the n-layer (). The LED () is designed to improve luminous intensity and to obtain purer blue color.

Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlGaN) in which the n-layer of n-type gallium nitride compound semiconductor (AlGaN) is of double-layer structure including an n-layer of low carrier concentration and an n-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlGaN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlGaN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

Method for manufacturing a gallium nitride group compound semiconductor

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al Ga N) in which the n-layer of n-type gallium nitride compound semiconductor (Al Ga N) is of double-layer structure including an n-layer of low carrier concentration and an n -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al Ga N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al Ga N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using gallium nitride group compound

Gallium nitride group compound semiconductor

Light emitting device

A light-emitting semiconductor device (,) consecutively includes a sapphire substrate (,), an AlN buffer layer (,), a silicon (Si) doped GaN n,-layer (,) of high carrier (n-type) concentration, a Si-doped (Al,Ga,),In,N n,-layer (,) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al,Ga,),In,N emission layer (,), and a Mg-doped (Al,Ga,),In,N p-layer (,). The AlN layer (,) has a 500 &angst; thickness. The GaN n,-layer (,) has about a 2.0 &mgr;m thickness and a 2&times;10,/cm,electron concentration. The n,-layer (,) has about a 2.0 &mgr;m thickness and a 2&times;10,/cm,electron concentration. The emission layer (,) has about a 0.5 &mgr;m thickness. The p-layer,has about a 1.0 &mgr;m thickness and a 2&times;10,/cm,hole concentration. Nickel electrodes (,) are connected to the p-layer (,) and n,-layer (,), respectively. A groove (,) electrically insulates the electrodes (,). The composition ratio of Al, Ga, and In in each of the layers (,) is selected to meet the lattice constant of GaN in the n,-layer (,). The LED (,) is designed to improve luminous intensity and to obtain purer blue color.

A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3&times;10,&OHgr;cm to 8&times;,&OHgr;cm or a carrier concentration ranging from 6&times;10,/cm,to 3&times;10,/cm,.

Light emitting semiconductor device using gallium nitride group compound

A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8) from each other. The composition ration of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n.sup.+ -layer (3). The LED (10) is designed to improve luminous intensity and to obtain a purer blue color.

Light-emitting semiconductor device using group III Nitrogen compound

Growing community of inventors

Ichinomiya, Japan

Katsuhide Manabe