Kabushiki Kaisha Toshiba

Kioxia Corporation

Infineon Technologies Ag

Toshiba Memory Corporation

Katsuaki Natori

Koji Yamakawa

Masayuki Tanaka

Yoshio Ozawa

Katsuyuki Sekine

Akihito Yamamoto

Ryota Fujitsuka

Daisuke Nishida

Daisuke Ikeno

Hiroyuki Kanaya

Hiroshi Itokawa

Yasuyuki Sonoda

Hirokazu Ishida

Masayuki Kitamura

Seiji Inumiya

Keisuke Nakazawa

Soichi Yamazaki

Katsuya Nishiyama

Tomohiro Saito

Makoto Nagamine

Yoshihiro Uozumi

Takayuki Beppu

Hiroshi Toyoda

Yoshihiro Ogawa

Keitaro Imai

Satoshi Wakatsuki

Osamu Arisumi

Junichi Shiozawa

Isao Kamioka

Kyoichi Suguro

Masatoshi Yoshikawa

Tadashi Kai

Ichiro Mizushima

Kazuaki Nakajima

Koji Ueda

Kazuhiro Eguchi

Yoshinori Kumura

Keiichi Sawa

Kenji Noma

Tetsuya Kai

Bum-ki Moon

Bum-Ki Moon

Shinichi Kanoo

Masumi Matsuzaki

Ryota Fujisuka

According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of HO, HF, NO, NO, NF, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).

Method for manufacturing semiconductor device

According to at least one embodiment, a semiconductor device includes a plurality of insulating films adjacent to each other. A conductive film is provided between the plurality of insulating films. The conductive film includes molybdenum having a grain diameter substantially the same as a distance from an upper surface to a lower surface of the conductive film.

Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

A production method of a semiconductor device includes introducing a reduction gas for reducing metal to a space containing a target to be used as the semiconductor device. The method also includes introducing a material gas and a first gas simultaneously to the space on a basis of a predetermined partial pressure ratio after introducing the reduction gas, to form a film that contains the metal, on the target. The material gas etches the metal when only the material gas is flowed. The first gas is different from the material gas. The predetermined partial pressure ratio is a ratio of the material gas and the first gas.

Production method of semiconductor device

A semiconductor device includes a substrate. The semiconductor device further includes a wiring layer provided on the substrate, the wiring layer including a molybdenum layer including oxygen atoms as an impurity.

Three-dimensional memory including molybdenum wiring layer having oxygen impurity and method for manufacturing the same

According to one embodiment, a magnetic memory device includes: a first magnetic layer; a nonmagnetic layer on the first magnetic layer; a second magnetic layer on the nonmagnetic layer; and an insulator film on the nonmagnetic layer surrounding a side surface of the second magnetic layer. The second magnetic layer has an area of a surface facing the nonmagnetic layer smaller than that of the nonmagnetic layer. The nonmagnetic layer includes a first region that is provided between the first magnetic layer and the insulator film. The first region includes an amorphous state.

Magnetic memory device and method of manufacturing the same

According to an embodiment, a non-volatile memory device includes electrodes, an inter-layer insulating film between the electrodes and at least one semiconductor layer extending through the electrodes and the inter-layer insulating film. The device includes a charge storage layer between the semiconductor layer and each electrode, a first insulating film between the charge storage layer and the semiconductor layer, and a second insulating film. The second insulating film includes a first portion between the charge storage layer and each electrode, a second portion between each electrode and the inter-layer insulating film, and a third portion that links the first portion and the second portion. In a cross-section of the third portion parallel to the first direction and a second direction toward each electrode from the charge storage layer, a curved surface on the charge storage layer side has a curvature radius larger than a surface on the electrodes side.

Non-volatile memory device and method for manufacturing same

According to one embodiment, a memory device with magnetroresistive effect element is disclosed. The element includes first metal magnetic film (MMF) with nonmagnetic element and axis of easy magnetization perpendicular (EMP), first insulating film, first intermediate magnetic film between the first MMF and the first insulating film, second MMF on the first insulating film and including nonmagnetic elements, the second MMF having axis of EMP, second intermediate magnetic film between the first insulating film and the second MMF, and diffusion preventing film including metal nitride having barrier property against diffusion of the nonmagnetic elements between the first MMF and the first intermediate magnetic film.

Semiconductor memory device and method for manufacturing the same

According to one embodiment, a magnetic memory includes magnetoresistive effect elements each including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer which are successively stacked, and a ferroelectric capacitor provided above the magnetoresistive effect elements via an insulating layer, and including a lower electrode, a ferroelectric film, and an upper electrode which are successively stacked.

Magnetic memory

A magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.

Magnetoresistive effect element

According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the tunnel barrier layer. The tunnel barrier includes a nonmagnetic oxide having a spinel structure. Oxides forming the spinel structure are combined such that a single phase is formed by a solid phase in a component ratio region including a component ratio corresponding to the spinel structure and having a width of not less than 2%.

Magnetoresistive effect element and manufacturing method thereof

According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the tunnel barrier. The tunnel barrier includes a nonmagnetic mixture containing MgO and a metal oxide with a composition which forms, in a solid phase, a single phase with MgO.

According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer.

Method of manufacturing semiconductor device

In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic layer, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second diffusion prevention layer on the second interfacial magnetic layer, a second magnetic layer on the second diffusion prevention layer, and an upper electrode layer on the second magnetic layer. The ratio of a crystal-oriented part to the other part in the second interfacial magnetic layer is higher than the ratio of a crystal-oriented part to the other part in the first interfacial magnetic layer.

Magnetoresistive element and manufacturing method of the same

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Yokohama, Japan

Katsuaki Natori