Ulvac, Inc.

Ferrotec Ceramics Corporation

Katsuaki Nakano

Daisuke Hiramatsu

Ken Okamoto

Yukihito Tashiro

Tadahisa Arahori

Yukinobu Numata

Junichi Itoh

Kanji Yaginuma

A sputtering apparatus (SM) has a vacuum chamber in which is disposed a target. A plasma atmosphere is formed inside the vacuum chamber to thereby sputter the target. The sputtered particles splashed from the target are caused to get adhered to, and deposited on, a surface of a substrate disposed in the vacuum chamber, thereby forming a predetermined thin film thereon. At such a predetermined position inside the vacuum chamber as is subject to adhesion of the sputtered particles splashed from the target, there is disposed an adhesion body whose at least the surface of adhesion of the sputtered particles is made of a material equal in kind to that of the target. The adhesion body has connected thereto a bias power supply for applying a bias voltage having negative potential at the time of forming the plasma atmosphere.

Sputtering apparatus and sputtering method

The sputtering apparatus has a vacuum chamber in which is disposed a target. While rotating a circular substrate at a predetermined rotational speed with a center of the substrate, the target is sputtered to form the thin film on the surface. The sputtering apparatus has: a stage for rotatably holding the substrate in a state in which the center of the substrate is offset by a predetermined distance to radially one side from the center of the target; and a shielding plate disposed between the target and the substrate on the stage. The shielding plate has an opening part allowing to pass sputtered particles scattered out of the target as a result of sputtering the target. The opening part has a contour in which, with a central region of the substrate serving as an origin, the area of the opening part gradually increases from the origin toward radially outward.

Sputtering apparatus

A method of forming an internal stress control film on one surface of an object to be processed by a sputtering method, includes selecting a pressure of a process gas at the time of forming the internal stress control film from a pressure region higher than a threshold value of 5 (Pa) so that stress of the object to be processed when a bias is applied to the object to be processed becomes larger stress on a tensile side and the internal stress control film has higher density, as compared with stress in a case in which a bias is not applied thereto.

Method of forming internal stress control film

A cathode device includes a rotation plate to which a magnetic circuit is fixed, a rotation mechanism including a rotation shaft that rotates the rotation plate when receiving power from a motor, and a linear motion parallel link mechanism. The parallel link mechanism includes an end effector, six links each having a distal end and a proximal end, and three linear motion mechanisms. The end effector rotationally supports the rotation shaft, the distal ends of the links are connected to the end effector, the links radially extend from the end effector, and the linear motion mechanisms move the proximal ends of adjacent two of the links in one direction when receiving power from respective linear actuators. A controller controls a change in position of the rotation shaft performed by a cooperative operation of the linear actuators, and controls rotation of the rotation shaft operated by the motor.

Cathode device and sputtering apparatus

A method of forming a hard mask includes depositing step for depositing a titanium nitride film on a surface of a to-be-processed object; adsorbing step for adsorbing oxygen-containing molecules onto a surface of the titanium nitride film; and heating step for heating the titanium nitride film to a predetermined temperature.

Method of, and apparatus for, forming hard mask

Disclosed is a surface-treated ceramic member which has a coating film-formed surface comprising a ceramic sintered body with a porosity of 1% or less and a sol-gel coating film of a silicon alkoxide compound polymer formed on at least a part of a ceramic sintered body, wherein the coating film and the surface of the body are coexistent in the coating film-formed surface. Specifically the area of the sol-gel coating film accounts for 5 to 80% of the total area of the coating film-formed surface. The surface-treated ceramic member has excellent corrosion resistance and is free from scattering of particles.

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Chigasaki, Japan

Katsuaki Nakano