Kyocera Corporation

Katsuaki Masaki

Yutaka Kuba

Chiaki Domoto

Daisuke Ueyama

Yuuichiro Hayashi

Kouji Miyamoto

Youji Furukubo

Masanori Okamoto

Sentaro Yamamoto

Takehiro Nishimura

Takeshi Kamikawa

Yoshiyuki Kawaguchi

Kazuhiro Nishizono

Yuichiro Hayashi

Kazuya Shibata

Kentaro Murakawa

Fumio Yamashita

Yuta Aoki

A template substrate including a first seed region and a growth restricting region that are aligned in a first direction, and a first semiconductor part positioned above the template substrate are provided, the first semiconductor part includes a first base positioned above the first seed region, and a first wing connected to the first base, the first wing facing the growth restricting region with a first void space interposed therebetween, the first wing includes an edge positioned above the growth restricting region, and a ratio of a width of the first void space with respect to a thickness of the first void space in the first direction is equal to or larger than 5.0.

Semiconductor substrate, and manufacturing method and manufacturing apparatus of semiconductor substrate

A method of manufacturing a semiconductor element according to the present disclosure includes an element forming step (S) of forming, on an underlying substrate (), a semiconductor element () connected to the underlying substrate () via a connecting portion () and including an upper surface () inclined with respect to a growth surface of the underlying substrate (), a preparing step (S) of preparing a support substrate () including an opposing surface () facing the underlying substrate (), a bonding step (S) of pressing the upper surface () of the semiconductor element () against the opposing surface () of the support substrate () and heating the upper surface () to bond the upper surface () of the semiconductor element () to the support substrate (), and a peeling step (S) of peeling the semiconductor element () from the underlying substrate ().

Method of manufacturing semiconductor element, and semiconductor element body

The present disclosure relates to an electronic component joining method and a joined structure. A solder layer made of a gold-tin alloy including 20 mass % or greater of tin is formed on a light-emitting element side, and a layer including gold as a main component is formed, as a joining layer for joining to the solder layer, on a submount side. The solder layer and the joining layer are heated at a temperature below the melting point of the gold-tin alloy of the solder layer to join the light-emitting element and the submount.

Electronic component joining method and joined structure

A light-emitting element housing member includes a substrate that is made of a ceramic and internally includes a deep-bottom-type space portion having an opening in at least one position thereof, wherein an inner wall of the space portion serves as a mounting part for a light-emitting element. A light-emitting element housing member includes a mounting part meant for mounting a light-emitting element and includes a substrate that includes a bottom base material having a rectangular shape in a planar view and a wall member provided on the bottom base material to enclose the mounting part in a U-shaped manner and have an opening in at least one portion thereof, wherein the substrate is integrally formed of a ceramic.

Light-emitting element housing member, array member, and light-emitting device

A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.

Method of producing crystal

A method for producing a crystal, according to the present invention, where the lower surfaceB of a seed crystalwhich is rotatably arranged and made of silicon carbide is brought into contact with a solutionof silicon solvent containing carbon in a cruciblewhich is rotatably arranged and the seed crystalis pulled up and a crystal of silicon carbide is grown from the solutionon the lower surfaceB of the seed crystalcomprising the steps of bringing the lower surfaceB of the seed crystalinto contact with the solutionin a contact step, rotating the seed crystalin a seed crystal rotation step, rotating the cruciblein a crucible rotation step, and stopping rotation of the cruciblewhile the seed crystalis rotated in the state in which the lower surfaceB of the seed crystalis in contact with the solutionin a deceleration step.

Method for producing crystal

A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Seed crystal holder for growing a crystal by a solution method

A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.

A light emitting element includes an optical semiconductor layer () obtained by sequentially laminating a first semiconductor layer (), a light emitting layer (), and a second semiconductor layer (); a first electrode layer () that is electrically connected to the first semiconductor layer (); and a second electrode layer () that is electrically connected to the second semiconductor layer (). The second electrode layer () includes a conductive reflecting layer () positioned on the second semiconductor layer (), and a conductive layer () having a plurality of through holes () that are positioned on the conductive reflecting layer () and penetrate therethrough in a thickness direction thereof.

Growing community of inventors

Kyoto, Japan

Katsuaki Masaki