Kabushiki Kaisha Toshiba

Katsuaki Aoki

Osamu Yamazaki

Masaki Narita

Yukimasa Yoshida

Hiroshi Fujita

Isao Matsui

Toshimitsu Omine

Takashi O

Naoya Hayamizu

Makoto Hasegawa

Takeshi Yamauchi

Kei Hattori

Naruhiko Kaji

Masashi Yamage

Hidemi Kanetaka

Hiroshi Katsumata

Yukihiro Oka

A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.

Surface treatment method, etching method, and method for manufacturing electronic device

A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.

Method of manufacturing semiconductor device, apparatus of manufacturing semiconductor device and semiconductor device

There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.

Semiconductor device manufacturing method

A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.

Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system

A microwave excitation plasma processing apparatus comprises a vacuum container having a plasma generating chamber at an upper portion thereof and a processing chamber, a gas supply pipe for supplying a process gas into the plasma generating chamber, a dielectric window arranged in an opening of an upper wall portion of the vacuum container, a rectangular waveguide arranged on the upper wall portion of the vacuum container including the dielectric window and comprising a first wall having a first surface perpendicular to a direction of electric field of a microwave to oppose the dielectric window, second walls having second surfaces parallel to the direction of electric field of the microwave and extending in a direction perpendicular to the first surface, and a third wall having a third surface which is provided on a side opposite to a microwave introducing side perpendicular to the first and second surfaces to reflect the microwave, and a microwave oscillator for introducing the microwave into the waveguide, wherein the waveguide has two slits which are formed in the first wall and located in the vicinity of the second walls, and which extend in parallel or substantially parallel to the second walls, each of the slits having a width which is smaller on a side closer to the third surface.

Microwave excitation plasma processing apparatus and microwave

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Kanagawa-ken, Japan

Katsuaki Aoki