Texas Instruments Corporation

Katleen Fajardo Timbol

Jeffrey Salvacion Solas

A described example includes: a semiconductor die having a device side surface and an opposing backside surface, the backside surface mounted to a die pad of a lead frame, the lead frame comprising conductive leads spaced from the die pad; a conductor layer overlying the device side surface; bond pads including bond pad conductors formed in the conductor layer, a nickel layer over the bond pad conductors, and a palladium or gold layer over the nickel layer; conductor traces formed in the conductor layer, the conductor traces free from the nickel layer and the palladium or gold layer; bond wires bonded to the bond pads electrically coupling the bond pads to conductive leads; and mold compound covering the semiconductor die, the bond pads, the bond wires, and portions of the lead frame, wherein portions of the conductive leads are exposed from the mold compound to form terminals.

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Allen, TX, United States of America

Katleen Fajardo Timbol