Globalfoundries Inc.

Katja Steffen

Jens Heinrich

Johannes F Groschopf

Andy C Wei

Ralf Richter

Gerd Marxsen

Frank Seliger

Andreas Ott

Rico Hueselitz

Manfred Heinz

Marco Kitsche

For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.

Planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurry

In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.

Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors

In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting species on the basis of a polishing process, wherein a sacrificial material may protect the sensitive materials in the gate opening.

Superior fill conditions in a replacement gate approach by performing a polishing process based on a sacrificial fill material

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Dresden, Germany

Katja Steffen