Quantum-Si Incorporated

Kathren Fink Croce

Gerard M Schmid

Jeremy Lackey

James Beach

Guojun Chen

A method of forming an integrated device includes forming a sample well within a cladding layer of a substrate; forming a sacrificial spacer layer over the substrate and into the sample well; performing a directional etch of the sacrificial spacer layer so as to form a sacrificial sidewall spacer on sidewalls of the sample well; forming, over the substrate and into the sample well, a functional layer that provides a location for attachment of a biomolecule; and removing the sacrificial spacer material.

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West Haven, CT, United States of America

Kathren Fink Croce