USA As Represented by Secretary of the Navy

Kathleen M Mccreary

Berend T Jonker

Connie H Li

Olaf M J Van 't Erve

Aubrey T Hanbicki

Olaf M J Van't Erve

Zachariah B Hennighausen

A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on BiSe/WSat room temperature, comprising the steps of applying a laser to the BiSe/WS, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing BiSe/WSas a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the BiSe/WSheterostructure at room temperature.

Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature

Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

Methods for forming lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

Light-emitting devices having lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A central area of an outer surface of an added layer atop a spin Hall material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.

Optical modulator using the spin hall effect in metals

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains and surface charges in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields and surface charges can control the structural phase of the two-dimensional material, which in turn determines whether the two-dimensional material layer is insulating or metallic, has a band gap or no band gap, and whether it is magnetic or non-magnetic. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers

The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.

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Washington, DC, United States of America

Kathleen M Mccreary