International Business Machines Corporation

Globalfoundries Inc.

Globalfoundries U.S. 2 LLC

Kathleen B Reuter

Joshua T Smith

Jingwei Bai

Satyavolu S Papa Rao

Yann A Astier

Yann A N Astier

Hariklia Deligianni

Lubomyr Taras Romankiw

Qiang Huang

Shafaat Ahmed

Raman Vaidyanathan

Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy.

Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures

An anti-retraction capping material is formed on a surface of a nanowire that is located upon a dielectric membrane. A gap is then formed into the anti-retraction capping material and nanowire forming first and second capped nanowire structures of a nanodevice. The nanodevice can be used for recognition tunneling measurements including, for example DNA sequencing. The anti-retraction capping material serves as a mobility barrier to pin, i.e., confine, a nanowire portion of each of the first and second capped nanowire structures in place, allowing long-term structural stability. In some embodiments, interelectrode leakage through solution during recognition tunneling measurements can be minimized.

Nanogap device with capped nanowire structures

Solid state nanopore devices for nanopore applications and methods of manufacture are disclosed herein. The method includes forming a membrane layer on an underlying substrate. The method further includes forming a hole in the membrane layer. The method further comprises plugging the hole with a sacrificial material. The method further includes forming a membrane over the sacrificial material. The method further includes removing the sacrificial material within the hole and portions of the underlying substrate. The method further includes drilling an opening in the membrane, aligned with the hole.

Solid state nanopore devices for nanopore applications to improve the nanopore sensitivity and methods of manufacture

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Yorktown Heights, NY, United States of America

Kathleen B Reuter