International Business Machines Corporation

King Abdulaziz City for Science and Technology

Globalfoundries Inc.

Other

Egypt Nanotechnologies Center

Toshiba America Electronic Components, Inc.

Egypt Nanotechnology Center (egnc)

Katherine Lynn Saenger

Alfred Grill

Devendra K Sadana

Stephen W Bedell

Keith E Fogel

Christopher Vincent Jahnes

David Edward Kotecki

Haizhou Yin

Sampath Purushothaman

Cyril Cabral, Jr

Ning Li

Guy M Cohen

Deborah A Neumayer

Chun-Yung Sung

Jack Oon Chu

Joel Pereira De Souza

Thomas M Shaw

Vishnubhai Vitthalbhai Patel

Wilbur David Pricer

Randy William Mann

Charles Thomas Black

Alexander Reznicek

Timothy Joseph Dalton

Hariklia Deligianni

John Albrecht Ott

James William Adkisson

Alessandro Cesare Callegari

Cheng-Wei Cheng

Satyanarayana Venkata Nitta

Rajarao Jammy

Bahman Hekmatshoartabari

Jeehwan Kim

Matthew Earl Colburn

Paul Alfred Lauro

Elbert Emin Huang

Wilfried Haensch

Robert L Wisnieff

Emanuel Israel Cooper

Jeffrey Curtis Hedrick

Harold John Hovel

Josephine B Chang

Kevin K Chan

Ali Afzali-Ardakani

Michael A Guillorn

Kevin Shawn Petrarca

Kuen-Ting Shiu

Min Yang

Steven John Koester

Lawrence Alfred Clevenger

Veeraraghavan S Basker

Ghavam G Shahidi

Davood Shahrjerdi

Christian Lavoie

Kerry Bernstein

Martin Michael Frank

Sandra Guy Malhotra

Andrew Herbert Simon

Dirk Pfeiffer

Lubomyr Taras Romankiw

Richard Paul Volant

Sufi Zafar

Christos Dimitrios Dimitrakopoulos

Vamsi Krishna Paruchuri

Jane M Shaw

David Lee Rath

Chandrasekhar Narayan

Sarunya Bangsaruntip

James Spiros Nakos

Shyng-Tsong Chen

Mahadevaiyer Krishnan

Kangguo Cheng

Bruce Bennett Doris

Ali Khakifirooz

Huilong Zhu

Vijay Narayanan

Son Van Nguyen

Shu-Jen Han

Leland Chang

Arvind Kumar

Jeng-Bang Yau

Alejandro Gabriel Schrott

Amlan Majumdar

Zhen Zhang

John Michael Cotte

Wayne Martin Moreau

Eduard Albert Cartier

Thomas J Shaw

Pranita Kulkarni

Evgeni Petrovich Gousev

Conal Eugene Murray

Ahmet Serkan Ozcan

George Stojan Tulevski

Stephen Mark Rossnagel

Yun-Yu Wang

Naftali Eliahu Lustig

Kwong Hon Wong

Robert Allen Groves

Fenton Read McFeely

James Bowler Hannon

Leathen Shi

A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.

Electrode formation for heterojunction solar cells

A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.

Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal

After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.

Crack-tolerant photovoltaic cell structure and fabrication method

A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

Method of forming a flexible semiconductor layer and devices on a flexible carrier

Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation are provided. An example method includes forming a dopant-containing amorphous silicon layer stack on at least one portion of a surface of a crystalline semiconductor layer; and irradiating a selected area of the dopant-containing amorphous silicon layer stack, wherein the selected area of the dopant-containing amorphous silicon layer stack interacts with an upper portion of the underlying crystalline semiconductor layer to form a doped, conductive crystalline region, and each non-selected area of the dopant-containing amorphous silicon layer stack remains intact on the at least one portion of the surface of the crystalline semiconductor layer.

Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation

Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.

Method for improving quality of spalled material layers

Structures and methods for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.

Forming patterned graphene layers

Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

Carbon nanostructure device fabrication utilizing protect layers

Method for a controlled spalling utilizing vaporizable release layers. For example, a method comprises providing a base substrate, depositing a stressor layer and a vaporizable release layer on the base substrate, forming a flexible support layer on at least one of the stressor layer and the vaporizable release layer, spalling an upper portion of the base substrate, securing the spalled upper portion of the base substrate to a handle substrate, and vaporizing the vaporizable release layer.

Controlled spalling utilizing vaporizable release layers

An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure on a substrate; applying a layer of graphene on top of the at least one patterned structure on the substrate; heating the layer of graphene on top of the at least one patterned structure to remove one or more graphene regions proximate to the at least one patterned structure; and removing the at least one patterned structure to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.

Growing community of inventors

Ossining, NY, United States of America

Katherine Lynn Saenger