Raytheon Company

University of Michigan

Katherine J Herrick

Linda P B Katehi

Miroslav Micovic

Alexandros Margomenos

Cheng P Wen

Michael G Adlerstein

John P Bettencourt

Alan J Bielunis

Andrew Gamalski

Jeffrey Laroche

Teresa J Clement

Gabriel M Rebeiz

Christopher Carbonneau

James P Becker

Thomas Ellis

Stephen Robertson

Karen Kaneko Baker

An Array Core Block for an AESA includes a stack of 2*M alternating N-channel RFIC and MMIC Power Amplifier wafers bonded together by a wafer-scale direct bond hybrid (DBH) interconnect process. This process forms both metal-to-metal and dielectric hydrogen bonds between bonding surfaces to seal the wafer stack. Each array core block includes an array of through substrate metal vias to distribute DC bias, LO and information signals. Each array core block also includes a cooling system including micro-channels formed on a backside of at least one of the chips in each bonded pair and through substrate via holes formed through the stack that operatively couple the micro-channels for all of the bonded pairs to receive and circulate a fluid through the micro-channels and through substrate via holes to cool the RFIC and MMIC Power Amplifier chips and to extract the heated fluid.

Wafer-scale direct bonded array core block for an active electronically steerable array (AESA)

A dual-band MMIC power amplifier and method of operation to amplify frequencies in different RF bands while only requiring input drive signals at frequencies fand fin a narrow RF input band. This allows for the use of a conventional narrowband RF IC to drive the MMIC and does not require additional circuitry (e.g., a LO) on the MMIC power amplifier. The matching network of the last amplification stage is modified to pass f(or a harmonic thereof), reflect f, pass a Pharmonic of fwhere P is 2 or 3 and to reflect any unused 1, 2or 3order harmonics of for fback into the MMIC. In response to an input signal at f, the MMIC power amplifier amplifies and outputs a signal at f(or a harmonic thereof). In response to an input signal at fat sufficient RF power, the last amplification stage operates in compression such that the MMIC power amplifier generates the harmonics, selects the Pharmonic and outputs an amplified RF signal at P*f.

Dual-band monolithic microwave IC (MMIC) power amplifier

A power sensor having a microstrip transmission line, comprising: a dielectric substrate; a strip conductor disposed on one surface of the substrate; and a ground plane conductor disposed on an opposite surface of the substrate. The power sensor includes a plurality of thermocouples extending from the strip conductor, proximal end portions of the thermocouples being thermally coupled to the strip conductor. A plurality of electrical conductors is provided, each one having a first end electrically connected to a distal end of a corresponding one of the thermocouples and a second end electrically connected to the proximate end of one of the plurality of thermocouples disposed adjacent to such corresponding one of the thermocouples. The proximal ends of the thermocouples are electrically insulated one from the other.

Microstrip power sensor

A reflect antenna element having a receive antenna section and a transmit antenna section. Each section has a cavity, a conductive element in registration with the cavity, and a ground plane conductor having a slot. A strip conductor has portions thereof disposed over the slots and the ground planes conductor. The strip conductor and underlying ground plane conductor form a microstrip transmission line for coupling energy received by the receive antenna section to the transmit antenna section. The transmit antenna section and receive antenna section are configured to operate with orthogonal polarizations. An amplifier is disposed in circuit with the transmission line.

Reflect antenna

A circuit for sensing radio frequency energy. The circuit includes a Wheatstone bridge having at least one element thereof thermally responsive to the radio frequency energy passing therethough differently from radio frequency energy passing though at least one other element of the bridge.

Broadband microwave power sensor

An RF micro-electro-mechanical system including a first silicon wafer having a top surface and a bottom surface. The top surface being opposite the bottom surface. A bore extends through the first silicon wafer. A micro-electro-mechanical device is provided and coupled to the top surface of the first silicon wafer. An electrical feed line then extends along the bottom surface of the first silicon wafer and an electrical interconnect electrically couples the micro-electro-mechanical device and the electrical feed line through the bore.

On-wafer packaging for RF-MEMS

Structures and methods that provide for via transitions between opposite sides of a high resistivity silicon micro-machined membrane substrate. The via transitions provide ground-signal-ground interconnection between coplanar waveguides disposed on opposite sides of substrate. Adjacent via transitions are anisotropically etched from opposite surfaces of the substrate to form the via transitions. The ground-signal-ground configuration provides RF impedance matching at the via transition.

Growing community of inventors

Chelmsford, MA, United States of America

Katherine J Herrick